| công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
|
SPC574S60 bảng dữ liệu(PDF) 20 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
SPC574S60 bảng dữ liệu(HTML) 20 Page - STMicroelectronics |
|
20 / 77 page ![]() Electrical characteristics SPC574Sx 20/77 DS10601 Rev 6 3.4 Electromagnetic compatibility (EMC) Information about EMC performance is available from STMicroelectronics on request. 3.5 Electrostatic discharge (ESD) Table 7 describes the ESD ratings of the device. 3.6 Operating conditions 1. Functional operating conditions are given in the DC electrical specifications. Absolute maximum ratings are stress ratings only, and functional operation at the maxima is not guaranteed. Exposure to absolute maximum rating conditions for extended periods may affect device reliability or cause permanent damage to the device. During overload conditions (VIN > VDD_HV_IO or VIN < VSS), the voltage on pins with respect to ground (VSS) must not exceed the recommended values. 2. External regulator mode. 3. Allowed 5.5–6.0 V for 60 seconds cumulative time with no restrictions, for 10 hours cumulative time device in reset, TJ =°C remaining time at or below 5.5 V. 4. The maximum input voltage on an I/O pin tracks with the associated I/O supply maximum. For the injection current condition on a pin, the voltage will be equal to the supply plus the voltage drop across the internal ESD diode from I/O pin to supply. The diode voltage varies greatly across process and temperature, but a value of 0.3V can be used for nominal calculations. 5. Analog and digital controller pins must not exceed mA. A VDD_HV_IO power segment is defined as one or more GPIO pins located between two VDD_HV_IO supply pins. 6. Solder profile per IPC/JEDEC J-STD-020D. 7. Moisture sensitivity per JEDEC test method A112. Table 7. ESD ratings(1),(2) Parameter C Conditions Value Unit ESD for Human Body Model (HBM)(3) T All pins 2000 V ESD for field induced Charged Device Model (CDM)(4) T All pins 500 V 1. All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits. 2. Device failure is defined as: “If after exposure to ESD pulses, the device does not meet the device specification requirements, which includes the complete DC parametric and functional testing at room temperature and hot temperature. Maximum DC parametrics variation within 10% of maximum specification”. 3. This parameter tested in conformity with ANSI/ESD STM5.1-2007 Electrostatic Discharge Sensitivity Testing. 4. This parameter tested in conformity with ANSI/ESD STM5.3-1990 Charged Device Model - Component Level. Table 8. Device operating conditions(1) Symbol C Parameter Conditions Value Unit Min Typ Max Frequency fSYS SR Device operating frequency(2) TJ -40 °C to 150 °C — — 140 MHz Temperature |
|
Link URL |
| Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không? [ DONATE ] |
Alldatasheet là | Quảng cáo | Liên lạc với chúng tôi | Chính sách bảo mật | Liên kết đến bảng dữ liệu | Trao đổi link | Tìm kiếm theo nhà sản xuất All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |