STM8L051F3 datasheet(86/96 Pages) STMICROELECTRONICS

86 / 96 page

Electrical parameters

STM8L051F3

86/96

DS9178 Rev 4

Most of the common failures (unexpected reset and program counter corruption) can be

reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1

second.

To complete these trials, ESD stress can be applied directly on the device, over the range of

specification values. When unexpected behavior is detected, the software can be hardened

to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic interference (EMI)

Based on a simple application running on the product (toggling 2 LEDs through the I/O

ports), the product is monitored in terms of emission. This emission test is in line with the

norm IEC61967-2 which specifies the board and the loading of each pin.

Absolute maximum ratings (electrical sensitivity)

Based on two different tests (ESD and LU) using specific measurement methods, the

product is stressed in order to determine its performance in terms of electrical sensitivity.

For more details, refer to the application note AN1181.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models

can be simulated: human body model and charge device model. This test conforms to the

JESD22-A114A/A115A standard.

Table 48. EMS data

Symbol

Parameter

Conditions

Level/

Class

VFESD

Voltage limits to be applied on

any I/O pin to induce a functional

disturbance

VDD = 3.3 V, TA = +25 °C,

fCPU= 16 MHz,

conforms to IEC 61000

VEFTB

Fast transient voltage burst limits

to be applied through 100 pF on

VDD and VSS pins to induce a

functional disturbance

VDD = 3.3 V, TA = +25 °C,

fCPU = 16 MHz,

conforms to IEC 61000

Using HSI

Using HSE

Table 49. EMI data (1)

1. Not tested in production.

Symbol

Parameter

Conditions

Monitored

frequency band

Max vs.

Unit

16 MHz

SEMI

Peak level

VDD = 3.6 V,

TA = +25 °C,

LQFP32

conforming to

IEC61967-2

0.1 MHz to 30 MHz

-3

μV

30 MHz to 130 MHz

130 MHz to 1 GHz

SAE EMI Level

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