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STM8L051F3 bảng dữ liệu(PDF) 67 Page - STMicroelectronics |
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STM8L051F3 bảng dữ liệu(HTML) 67 Page - STMicroelectronics |
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67 / 96 page ![]() DS9178 Rev 4 67/96 STM8L051F3 Electrical parameters 87 Table 35. I/O static characteristics Symbol Parameter Conditions(1) Min Typ Max Unit VIL Input low level voltage(2) Input voltage on true open-drain pins (PC0 and PC1) VSS-0.3 0.3 x VDD V Input voltage on five-volt tolerant (FT) pins (PA7 and PE0) VSS-0.3 0.3 x VDD Input voltage on 3.6 V tolerant (TT) pins VSS-0.3 0.3 x VDD Input voltage on any other pin VSS-0.3 0.3 x VDD VIH Input high level voltage (2) Input voltage on true open-drain pins (PC0 and PC1) with VDD < 2 V 0.70 x VDD 5.2 V Input voltage on true open-drain pins (PC0 and PC1) with VDD ≥ 2 V 5.5 Input voltage on five-volt tolerant (FT) pins (PA7 and PE0) with VDD < 2 V 0.70 x VDD 5.2 Input voltage on five-volt tolerant (FT) pins (PA7 and PE0) with VDD ≥ 2 V 5.5 Input voltage on 3.6 V tolerant (TT) pins 3.6 Input voltage on any other pin 0.70 x VDD VDD+0.3 Vhys Schmitt trigger voltage hysteresis (3) I/Os 200 mV True open drain I/Os 200 Ilkg Input leakage current (4) VSS≤VIN≤VDD High sink I/Os -- 50 (5) nA VSS≤VIN≤VDD True open drain I/Os - - 200(5) VSS≤VIN≤VDD PA0 with high sink LED driver capability - - 200(5) RPU Weak pull-up equivalent resistor(2)(6) VIN=VSS 30 45 60 k Ω CIO I/O pin capacitance 5 pF 1. VDD = 3.0 V, TA = -40 to 85 °C unless otherwise specified. 2. Guaranteed by characterization results. 3. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested. 4. The max. value may be exceeded if negative current is injected on adjacent pins. 5. Not tested in production. 6. RPU pull-up equivalent resistor based on a resistive transistor (corresponding IPU current characteristics described in Figure 19). |
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