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STM8L051F3 bảng dữ liệu(PDF) 85 Page - STMicroelectronics |
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STM8L051F3 bảng dữ liệu(HTML) 85 Page - STMicroelectronics |
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85 / 96 page ![]() DS9178 Rev 4 85/96 STM8L051F3 Electrical parameters 87 Figure 37. Power supply and reference decoupling (VREF+ connected to VDDA) 8.3.11 EMC characteristics Susceptibility tests are performed on a sample basis during product characterization. Functional EMS (electromagnetic susceptibility) Based on a simple running application on the product (toggling 2 LEDs through I/O ports), the product is stressed by two electromagnetic events until a failure occurs (indicated by the LEDs). • ESD: Electrostatic discharge (positive and negative) is applied on all pins of the device until a functional disturbance occurs. This test conforms with the IEC 61000 standard. • FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS through a 100 pF capacitor, until a functional disturbance occurs. This test conforms with the IEC 61000 standard. A device reset allows normal operations to be resumed. The test results are given in the table below based on the EMS levels and classes defined in application note AN1709. Designing hardened software to avoid noise problems EMC characterization and optimization are performed at component level with a typical application environment and simplified MCU software. It should be noted that good EMC performance is highly dependent on the user application and the software in particular. Therefore it is recommended that the user applies EMC software optimization and prequalification tests in relation with the EMC level requested for his application. Prequalification trials STM8L Supply ai17032d 1 μF // 10 nF VREF+/VDDA VREF-/VSSA |
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