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STM8L051F3 bảng dữ liệu(PDF) 63 Page - STMicroelectronics

tên linh kiện STM8L051F3
Giải thích chi tiết về linh kiện  8-bit ultra-low-power MCU, 8-Kbyte Flash memory, 256-byte data EEPROM, RTC, timers, USART, I2C, SPI, ADC
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
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STM8L051F3 bảng dữ liệu(HTML) 63 Page - STMicroelectronics

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DS9178 Rev 4
63/96
STM8L051F3
Electrical parameters
87
Internal clock sources
Subject to general operating conditions for VDD, and TA.
High speed internal RC oscillator (HSI)
In the following table, data is based on characterization results, not tested in production,
unless otherwise specified.
Figure 14. Typical HSI frequency vs VDD
Table 30. HSI oscillator characteristics
Symbol
Parameter
Conditions(1)
Min
Typ
Max
Unit
fHSI
Frequency
VDD = 3.0 V
-
16
-
MHz
ACCHSI
Accuracy of HSI
oscillator (factory
calibrated)
VDD = 3.0 V, TA = 25 °C
-1 (2)
-2.5
-
1(2)
%
1.8 V
≤ VDD ≤ 3.6 V,
-40 °C
≤ TA ≤ 85 °C
-5
-
5
%
TRIM
HSI user trimming
step(3)
Trimming code
≠ multiple of 16
-
0.4
0.7
%
Trimming code = multiple of 16
-
-
± 1.5
%
tsu(HSI)
HSI oscillator setup
time (wakeup time)
--
3.7
6(4)
µs
IDD(HSI)
HSI oscillator power
consumption
-
-
100
140(4)
µA
1. VDD = 3.0 V, TA = -40 to 85 °C unless otherwise specified.
2. Tested in production.
3. The trimming step differs depending on the trimming code. It is usually negative on the codes which are multiples of 16
(0x00, 0x10, 0x20, 0x30...0xE0). Refer to the AN3101 “STM8L15x internal RC oscillator calibration” application note for
more details.
4. Guaranteed by design.
13.0
13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
17.5
18.0
-40°C
25°C
85°C
VDD [V]
1.8 1.95
2.1
2.25
2.4
2.55
2.7
2.85
3
3.15
3.3 3.45
3.6
ai18218c



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