công cụ tìm kiếm bảng dữ liệu linh kiện điện tử
  Vietnamese  ▼
ALLDATASHEET.VN

X  

STM8L051F3 bảng dữ liệu(PDF) 65 Page - STMicroelectronics

tên linh kiện STM8L051F3
Giải thích chi tiết về linh kiện  8-bit ultra-low-power MCU, 8-Kbyte Flash memory, 256-byte data EEPROM, RTC, timers, USART, I2C, SPI, ADC
PDF  96 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
Trang chủ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM8L051F3 bảng dữ liệu(HTML) 65 Page - STMicroelectronics

Back Button STM8L051F3 Datasheet HTML 61Page - STMicroelectronics STM8L051F3 Datasheet HTML 62Page - STMicroelectronics STM8L051F3 Datasheet HTML 63Page - STMicroelectronics STM8L051F3 Datasheet HTML 64Page - STMicroelectronics STM8L051F3 Datasheet HTML 65Page - STMicroelectronics STM8L051F3 Datasheet HTML 66Page - STMicroelectronics STM8L051F3 Datasheet HTML 67Page - STMicroelectronics STM8L051F3 Datasheet HTML 68Page - STMicroelectronics STM8L051F3 Datasheet HTML 69Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 65 / 96 page
background image
DS9178 Rev 4
65/96
STM8L051F3
Electrical parameters
87
8.3.5
Memory characteristics
TA = -40 to 85 °C unless otherwise specified.
Flash memory
Table 32. RAM and hardware registers
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRM
Data retention mode (1)
1. Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware
registers (only in Halt mode). Guaranteed by characterization.
Halt mode (or Reset)
1.8
-
-
V
Table 33. Flash program and data EEPROM memory
Symbol
Parameter
Conditions
Min
Typ
Max
(1)
Unit
VDD
Operating voltage
(all modes, read/write/erase)
fSYSCLK = 16 MHz
1.8
3.6
V
tprog
Programming time for 1 or 64 bytes (block)
erase/write cycles (on programmed byte)
6ms
Programming time for 1 to 64 bytes (block)
write cycles (on erased byte)
3ms
Iprog
Programming/ erasing consumption
TA=+25 °C, VDD = 3.0 V
0.7
mA
TA=+25 °C, VDD = 1.8 V
tRET(2)
Data retention (program memory) after 100
erase/write cycles at TA= –40 to +85 °C
TRET = +85 °C
30(1)
years
Data retention (data memory) after 100000
erase/write cycles at TA= –40 to +85 °C
TRET = +85 °C
30(1)
NRW (3)
Erase/write cycles (program memory)
TA = –40 to +85 °C
100(1)
cycles
Erase/write cycles (data memory)
100(1)
(4)
kcycles
1. Guaranteed by characterization results.
2. Conforming to JEDEC JESD22a117
3. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation
addresses a single byte.
4. Data based on characterization performed on the whole data memory.



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96


bảng dữ liệu tải về

Go To PDF Page


Link URL



Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không?  [ DONATE ] 

Alldatasheet là   |   Quảng cáo   |   Liên lạc với chúng tôi   |   Chính sách bảo mật   |   Liên kết đến bảng dữ liệu    |   Trao đổi link   |   Tìm kiếm theo nhà sản xuất
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com