DS280DF810ABVT datasheet(7/51 Pages) TI1

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DS280DF810

www.ti.com

SNLS538A – SEPTEMBER 2016 – REVISED OCTOBER 2019

Product Folder Links: DS280DF810

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Pin Functions (continued)

TYPE

INTERNAL

PULL-UP/

PULL-DOWN

DESCRIPTION

NAME

NO.

GND

A1, A2, A4, A6,

A8, A10, A12,

A14, A15, B2,

B4, B6, B8,

B10, B12, B14,

C2, C3, C4, C5,

C6, C7, C8, C9,

C10, C11, C12,

C13, C14, D1,

D2, D5, D7, D9,

D11, D14, D15,

E11, F1, F2,

F5, F7, F9, F11,

F14, F15, G2,

G3, G4, G5,

G6, G7, G8,

G9, G10, G11,

G12, G13, G14,

H2, H4, H6, H8,

H10, H12, H14,

J1, J2, J4, J6,

J8, J10, J12,

J14, J15

Power

None

Ground reference. The GND pins on this device should be

connected through a low-resistance path to the board GND plane.

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7 Specifications

7.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted).

(1)

MIN

MAX

UNIT

VDDABSMAX

Supply voltage (VDD)

-0.5

2.75

VIO2.5V,ABSMAX

2.5 V I/O voltage (LVCMOS, CMOS and Analog)

-0.5

2.75

VIO3.3V,ABSMAX

Open Drain Voltage (SDA, SDC, INT_N) and LVCMOS Input Voltage (READ_EN_N)

-0.5

4.0

VINABSMAX

Signal input voltage (RXnP, RXnN)

-0.5

2.75

VOUTABSMAX

Signal output voltage (TXnP, TXnN)

-0.5

2.75

TJABSMAX

Junction temperature

150

ºC

Tstg

Storage temperature

-40

150

ºC

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with

less than 500-V HBM is possible with the necessary precautions. Pins listed as ±2,000 V may actually have higher performance.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with

less than 250-V CDM is possible with the necessary precautions. Pins listed as ±1,000 V may actually have higher performance.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2,000

Charged-device model (CDM), per JEDEC specification JESD22-

C101(2)

±1,000

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