NX138BKS datasheet(6/15 Pages) NEXPERIA

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Nexperia

NX138BKS

60 V, dual N-channel Trench MOSFET

NX138BKS

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Product data sheet

15 June 2016

6 / 15

9. Characteristics

Table 6. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics (per transistor)

V(BR)DSS

drain-source

breakdown voltage

ID = 250 µA; VGS = 0 V; Tj = 25 °C

VGSth

gate-source threshold

voltage

ID = 250 µA; VDS=VGS; Tj = 25 °C

0.5

1.5

IDSS

drain leakage current

VDS = 60 V; VGS = 0 V; Tj = 25 °C

µA

VGS = 20 V; VDS = 0 V; Tj = 25 °C

µA

VGS = -20 V; VDS = 0 V; Tj = 25 °C

-10

µA

VGS = 10 V; VDS = 0 V; Tj = 25 °C

µA

VGS = -10 V; VDS = 0 V; Tj = 25 °C

-1

µA

VGS = 5 V; VDS = 0 V; Tj = 25 °C

0.3

µA

IGSS

gate leakage current

VGS = -5 V; VDS = 0 V; Tj = 25 °C

-0.3

µA

VGS = 10 V; ID = 200 mA; Tj = 25 °C

2.1

3.5

VGS = 10 V; ID = 200 mA; Tj = 150 °C

4.3

7.2

VGS = 5 V; ID = 170 mA; Tj = 25 °C

2.2

3.8

RDSon

drain-source on-state

resistance

VGS = 2.5 V; ID = 75 mA; Tj = 25 °C

2.6

gfs

forward

transconductance

VDS = 10 V; ID = 200 mA; Tj = 25 °C

0.7

Dynamic characteristics (per transistor)

QG(tot)

total gate charge

0.5

0.7

QGS

gate-source charge

0.12

QGD

gate-drain charge

VDS = 30 V; ID = 200 mA; VGS = 10 V;

Tj = 25 °C

0.12

Ciss

input capacitance

Coss

output capacitance

3.1

Crss

reverse transfer

capacitance

VDS = 30 V; f = 1 MHz; VGS = 0 V;

Tj = 25 °C

td(on)

turn-on delay time

rise time

td(off)

turn-off delay time

fall time

VDS = 30 V; ID = 200 mA; VGS = 10 V;

RG(ext) = 6 Ω; Tj = 25 °C

Source-drain diode (per transistor)

VSD

source-drain voltage

IS = 200 mA; VGS = 0 V; Tj = 25 °C

0.9

1.2

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