NX138BKS datasheet(3/15 Pages) NEXPERIA

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Nexperia

NX138BKS

60 V, dual N-channel Trench MOSFET

NX138BKS

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Product data sheet

15 June 2016

3 / 15

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor

VDS

drain-source voltage

VGS

gate-source voltage

Tj = 25 °C

-20

VGS = 10 V; Tamb = 25 °C

[1]

210

VGS = 10 V; Tamb = 100 °C

[1]

135

drain current

VGS = 10 V; Tsp = 25 °C

330

IDM

peak drain current

Tamb = 25 °C; single pulse; tp ≤ 10 µs

855

[2]

285

Tamb = 25 °C

[1]

320

Ptot

total power dissipation

Tsp = 25 °C

860

Per device

junction temperature

-55

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

Source-drain diode

source current

Tamb = 25 °C

[1]

170

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm2.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

Tj (°C)

- 75

175

125

- 25

017aaa123

120

Pder

(%)

Fig. 1. MOSFET transistor: Normalized total power

dissipation as a function of junction temperature

Tj (°C)

- 75

175

125

- 25

017aaa124

120

Ider

(%)

Fig. 2. MOSFET transistor: Normalized continuous drain

current as a function of junction temperature

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