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SPC560B50x bảng dữ liệu(PDF) 69 Page - STMicroelectronics |
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SPC560B50x bảng dữ liệu(HTML) 69 Page - STMicroelectronics |
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69 / 116 page ![]() DocID14619 Rev 13 69/116 SPC560B40x/50x, SPC560C40x/50x Package pinouts and signal descriptions 115 3.19.2 Flash power supply DC characteristics Table 32 shows the power supply DC characteristics on external supply. Table 31. Flash read access timing Symbol C Parameter Conditions(1) 1. VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = 40 to 125 °C, unless otherwise specified Max Unit fREAD CC P Maximum frequency for Flash reading 2 wait states 64 MHz C 1 wait state 40 C 0 wait states 20 Table 32. Flash memory power supply DC electrical characteristics Symbol C Parameter Conditions(1) Value Unit Min Typ Max IFREAD (2) CC D Sum of the current consumption on VDD_HV and VDD_BV on read access Code flash memory module read fCPU = 64 MHz (3) —15 33 mA Data flash memory module read fCPU = 64 MHz (3) —15 33 IFMOD (2) CC D Sum of the current consumption on VDD_HV and VDD_BV on matrix modification (program/erase) Program/Erase ongoing while reading code flash memory registers fCPU = 64 MHz (3) —15 33 mA Program/Erase ongoing while reading data flash memory registers fCPU = 64 MHz (3) —15 33 IFLPW CC D Sum of the current consumption on VDD_HV and VDD_BV During code flash memory low- power mode —— 900 µA During data flash memory low- power mode —— 900 IFPWD CC D Sum of the current consumption on VDD_HV and VDD_BV During code flash memory power-down mode —— 150 µA During data flash memory power- down mode —— 150 1. VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = 40 to 125 °C, unless otherwise specified 2. This value is only relative to the actual duration of the read cycle 3. fCPU 64 MHz can be achieved only at up to 105 °C |
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