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AN4149 bảng dữ liệu(PDF) 14 Page - STMicroelectronics |
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AN4149 bảng dữ liệu(HTML) 14 Page - STMicroelectronics |
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14 / 43 page ![]() Designing a CCM FOT-controlled PFC AN4149 14/43 DocID023523 Rev 2 Equation 33 Maximum RMS diode current: Equation 34 It is worth reminding that the accuracy of the equations developed here is quite good at low line voltage and worsens at high line and as the power throughput is reduced. As the current stresses of the switches are calculated at maximum load and minimum line voltage, the previous expressions are acceptable for design purposes. 2.3 Power section design 2.3.1 Bridge rectifier The input rectifier bridge can use standard slow recovery, low-cost devices. Typically a 600 V device is selected in order to have good margin against mains surges. An NTC resistor limiting the current at turn-on is required to avoid overstressing the bridge diodes. The rectifier bridge power dissipation can be calculated starting from the input RMS current and the input average current through the bridge diodes. Equation 35 Equation 36 The power dissipated on a D15XB60 bridge can be estimated combining equation 35 and equation 36 with the threshold voltage (Vth) and dynamic resistance (Rdiode) of a single diode of the bridge, the values of which can be found in the datasheet of the diode. Equation 37 π 3 16 2 2 mi n min k PF V P ISW AC in rm s ⋅ − ⋅ ⋅ ⋅ = A V W ISW rm s 65 . 3 3 318 . 0 16 2 99 . 0 90 2 4 . 38 0 = ⋅ − ⋅ ⋅ ⋅ = π π 3 16 2 min mi n k PF V P ID AC in rm s ⋅ ⋅ ⋅ ⋅ = A PF V W ID rms 22 . 2 3 32 . 0 16 90 2 4 . 380 = ⋅ ⋅ ⋅ ⋅ = π A A I I in bri d ge rm s in 02 . 3 2 36 . 4 2 2 2 _ _ = ⋅ = ⋅ = A A I I in bri dg e avg in 92 . 1 36 . 4 2 2 _ _ = ⋅ = ⋅ = π π avg in th inrms diode bridge I V I R P _ 2 4 4 ⋅ ⋅ + ⋅ ⋅ = W A V A P bridge 29 . 6 92 . 1 7 . 0 4 ) 02 . 3 ( 025 . 0 4 2 = ⋅ ⋅ + ⋅ Ω ⋅ = |
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