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GMS87C1102 bảng dữ liệu(PDF) 13 Page - Hynix Semiconductor |
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GMS87C1102 bảng dữ liệu(HTML) 13 Page - Hynix Semiconductor |
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13 / 89 page ![]() GMS81C1102 / GMS81C1202 10 Jan. 2002 ver 2.0 10. ELECTRICAL CHARACTERISTICS -GMS81C1102, GMS81C1202 10.1 Absolute Maximum Ratings - GMS81C1102, GMS81C1202 Supply voltage ........................................... -0.3 to +6.5 V Storage Temperature ................................-40 to +125 °C Voltage on any pin with respect to Ground (VSS) ............................................................... -0.3 to VDD+0.3 Maximum current out of VSS pin ........................200 mA Maximum current into VDD pin ..........................150 mA Maximum current sunk by (IOL per I/O Pin) ........25 mA Maximum output current sourced by (IOH per I/O Pin) ...............................................................................15 mA Maximum current ( ΣIOL) .................................... 150 mA Maximum current ( ΣIOH).................................... 100 mA Note: Stresses above those listed under "Absolute Maxi- mum Ratings" may cause permanent damage to the device. This is a stress rating only and functional op- eration of the device at any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 10.2 Recommended Operating Conditions - GMS81C1102, GMS81C1202 Parameter Symbol Condition Specifications Unit Min. Max. Supply Voltage VDD fXIN=8MHz 4.5 6.0 V fXIN=4.2MHz 2.2 6.0 Operating Frequency fXIN VDD=4.5~6.0V 18 MHz VDD=2.2~6.0V 14.2 Operating Temperature TOPR -20 85 °C |
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