40

AmC0XXDFLKA

AC CHARACTERISTICS—ALTERNATE CE CONTROLLED WRITES

Write/Erase/Program Operations

Notes:

1. Rise/Fall

≤10 ns.

2. Maximum specification not needed due to the internal stop timer that will stop any erase or write operation that exceed the

device specification.

3. Card Enable Controlled Programming:

Flash Programming is controlled by the valid combination of the Card Enable (CE1, CE2) and Write Enable (WE) signals. For

systems that use the Card Enable signal(s) to define the write pulse width, all Setup, Hold, and inactive Write Enable timing

should be measured relative to the Card Enable signal(s).

4. Embedded Program Operation of 8

µs consist of 6 µs program pulse and 2 µs write recovery before read.This is the minimum

time for one pass through the programming algorithm. D5 = “1” only after a byte takes longer than 2 ms to Write.

Card Speed

Parameter Symbol

Parameter Description

-150 ns

Unit

JEDEC

Standard

Min

Max

Write Cycle Time

150

ns

Address Setup Time

20

ns

Address Hold Time

55

ns

Data Setup Time

50

ns

Data Hold Time

20

ns

Output Enable Hold Time for Embedded Algorithm

20

ns

Read Recovery Time before Write

20

ns

WE Setup Time before CE

0ns

WE Hold Time

0

ns

CE Pulse Width

80

ns

CE Pulse Width HIGH (Note 3)

50

ns

Embedded Programming Operation (Notes 3, 4)

8

µs

2ms

Embedded Erase Operation for each 64K byte Memory Sector

(Notes 1, 2)

s

50

ms