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STM32F050C4 bảng dữ liệu(PDF) 41 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  Low- and medium-density advanced ARM-based 32-bit MCU with up to 32 Kbytes Flash, timers, ADC and comm. interfaces
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STM32F050xx
Electrical characteristics
Doc ID 023683 Rev 1
41/97
6.3.4
Embedded reference voltage
The parameters given in Table 19 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 15: General operating
conditions.
VPVD5
PVD threshold 5
Rising edge
2.57
2.68
2.79
V
Falling edge
2.47
2.58
2.69
V
VPVD6
PVD threshold 6
Rising edge
2.66
2.78
2.9
V
Falling edge
2.56
2.68
2.8
V
VPVD7
PVD threshold 7
Rising edge
2.76
2.88
3
V
Falling edge
2.66
2.78
2.9
V
VPVDhyst
(2)
PVD hysteresis
-
100
-
mV
IDD(PVD)
PVD current consumption
-
0.15
0.26
µA
1.
Data based on characterization results only, not tested in production.
2.
Guaranteed by design, not tested in production.
Table 18.
Programmable voltage detector characteristics (continued)
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1)
Unit
Table 19.
Embedded internal reference voltage
Symbol
Parameter
Conditions
Min Typ
Max
Unit
VREFINT
Internal reference voltage
–40 °C < TA < +105 °C 1.16 1.2
1.25
V
–40 °C < TA < +85 °C
1.16 1.2 1.24(1)
1.
Data based on characterization results, not tested in production.
V
TS_vrefint
(2)
2.
Shortest sampling time can be determined in the application by multiple iterations.
ADC sampling time when
reading the internal
reference voltage
-
5.1
17.1(3)
3.
Guaranteed by design, not tested in production.
µs
ΔVREFINT
Internal reference voltage
spread over the
temperature range
VDDA = 3 V ±10 mV
-
-
10(3)
mV
TCoeff
Temperature coefficient
-
-
100(3) ppm/°C



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