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STM32F050C4 bảng dữ liệu(PDF) 40 Page - STMicroelectronics |
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STM32F050C4 bảng dữ liệu(HTML) 40 Page - STMicroelectronics |
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40 / 97 page ![]() Electrical characteristics STM32F050xx 40/97 Doc ID 023683 Rev 1 6.3.2 Operating conditions at power-up / power-down The parameters given in Table 16 are derived from tests performed under the ambient temperature condition summarized in Table 15. 6.3.3 Embedded reset and power control block characteristics The parameter given in Table 17 is derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 15: General operating conditions. Table 16. Operating conditions at power-up / power-down Symbol Parameter Conditions Min Max Unit tVDD VDD rise time rate 0 ∞ µs/V VDD fall time rate 20 ∞ tVDDA VDDA rise time rate 0 ∞ VDDA fall time rate 20 ∞ Table 17. Embedded reset and power control block characteristics Symbol Parameter Conditions Min Typ Max Unit VPOR/PDR (1) 1. The PDR detector monitors VDD and also VDDA (if kept enabled in the option bytes). The POR detector monitors only VDD. Power on/power down reset threshold Falling edge 1.8(2) 2. The product behavior is guaranteed by design down to the minimum VPOR/PDR value. 1.88 1.96 V Rising edge 1.84 1.92 2.0 V VPDRhyst (1) PDR hysteresis - 40 - mV tRSTTEMPO (3) 3. Guaranteed by design, not tested in production. Reset temporization 1.5 2.5 4.5 ms Table 18. Programmable voltage detector characteristics Symbol Parameter Conditions Min(1) Typ Max(1) Unit VPVD0 PVD threshold 0 Rising edge 2.1 2.18 2.26 V Falling edge 2 2.08 2.16 V VPVD1 PVD threshold 1 Rising edge 2.19 2.28 2.37 V Falling edge 2.09 2.18 2.27 V VPVD2 PVD threshold 2 Rising edge 2.28 2.38 2.48 V Falling edge 2.18 2.28 2.38 V VPVD3 PVD threshold 3 Rising edge 2.38 2.48 2.58 V Falling edge 2.28 2.38 2.48 V VPVD4 PVD threshold 4 Rising edge 2.47 2.58 2.69 V Falling edge 2.37 2.48 2.59 V |
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