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STM32F407IE bảng dữ liệu(PDF) 101 Page - STMicroelectronics

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STM32F405xx, STM32F407xx
Electrical characteristics
Doc ID 022152 Rev 3
101/180
Table 40.
Flash memory endurance and data retention
5.3.13
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
●
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
●
FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS
through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant
with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 41. They are based on the EMS levels and classes
defined in application note AN1709.
VPP
VPP voltage range
7
-
9
V
IPP
Minimum current sunk on
the VPP pin
10
-
-
mA
tVPP
(3)
Cumulative time during
which VPP is applied
-
-
1
hour
1.
Guaranteed by design, not tested in production.
2.
The maximum programming time is measured after 100K erase operations.
3.
VPP should only be connected during programming/erasing.
Symbol
Parameter
Conditions
Value
Unit
Min(1)
1.
Based on characterization, not tested in production.
NEND
Endurance
TA = –40 to +85 °C (6 suffix versions)
TA = –40 to +105 °C (7 suffix versions)
10
kcycles
tRET
Data retention
1 kcycle(2) at TA = 85 °C
2.
Cycling performed over the whole temperature range.
30
Years
1 kcycle(2) at TA = 105 °C
10
10 kcycles(2) at TA = 55 °C
20
Table 39.
Flash memory programming with VPP (continued)
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1)
Unit



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