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STM32F407IE bảng dữ liệu(PDF) 94 Page - STMicroelectronics

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STM32F407IE bảng dữ liệu(HTML) 94 Page - STMicroelectronics

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Electrical characteristics
STM32F405xx, STM32F407xx
94/180
Doc ID 022152 Rev 3
5.3.9
Internal clock source characteristics
The parameters given in Table 32 and Table 33 are derived from tests performed under
ambient temperature and VDD supply voltage conditions summarized in Table 13.
High-speed internal (HSI) RC oscillator
Low-speed internal (LSI) RC oscillator
Table 32.
HSI oscillator characteristics (1)
1.
VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
-
16
-
MHz
ACCHSI
Accuracy of the HSI
oscillator
User-trimmed with the RCC_CR
register(2)
2.
Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from the
ST website www.st.com.
--
1
%
Factory-
calibrated
TA = –40 to 105 °C
–8
-
4.5
%
TA = –10 to 85 °C
–4
-
4
%
TA = 25 °C
–1
-
1
%
tsu(HSI)
(3)
3.
Guaranteed by design, not tested in production.
HSI oscillator
startup time
-2.2
4
µs
IDD(HSI)
HSI oscillator
power consumption
-60
80
µA
Table 33.
LSI oscillator characteristics (1)
1.
VDD = 3 V, TA = –40 to 105 °C unless otherwise specified.
Symbol
Parameter
Min
Typ
Max
Unit
fLSI
(2)
2.
Based on characterization, not tested in production.
Frequency
17
32
47
kHz
tsu(LSI)
(3)
3.
Guaranteed by design, not tested in production.
LSI oscillator startup time
-
15
40
µs
IDD(LSI)
(3)
LSI oscillator power consumption
-
0.4
0.6
µA



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