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STM32F407IE bảng dữ liệu(PDF) 75 Page - STMicroelectronics

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STM32F407IE bảng dữ liệu(HTML) 75 Page - STMicroelectronics

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STM32F405xx, STM32F407xx
Electrical characteristics
Doc ID 022152 Rev 3
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5.3.5
Embedded reset and power control block characteristics
The parameters given in Table 18 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 13.
Table 18.
Embedded reset and power control block characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VPVD
Programmable voltage
detector level selection
PLS[2:0]=000 (rising
edge)
2.09
2.14
2.19
V
PLS[2:0]=000 (falling
edge)
1.98
2.04
2.08
V
PLS[2:0]=001 (rising
edge)
2.23
2.30
2.37
V
PLS[2:0]=001 (falling
edge)
2.13
2.19
2.25
V
PLS[2:0]=010 (rising
edge)
2.39
2.45
2.51
V
PLS[2:0]=010 (falling
edge)
2.29
2.35
2.39
V
PLS[2:0]=011 (rising
edge)
2.54
2.60
2.65
V
PLS[2:0]=011 (falling
edge)
2.44
2.51
2.56
V
PLS[2:0]=100 (rising
edge)
2.70
2.76
2.82
V
PLS[2:0]=100 (falling
edge)
2.59
2.66
2.71
V
PLS[2:0]=101 (rising
edge)
2.86
2.93
2.99
V
PLS[2:0]=101 (falling
edge)
2.65
2.84
3.02
V
PLS[2:0]=110 (rising
edge)
2.96
3.03
3.10
V
PLS[2:0]=110 (falling
edge)
2.85
2.93
2.99
V
PLS[2:0]=111 (rising
edge)
3.07
3.14
3.21
V
PLS[2:0]=111 (falling
edge)
2.95
3.03
3.09
V
VPVDhyst
(3)
PVD hysteresis
-
100
-
mV
VPOR/PDR
Power-on/power-down
reset threshold
Falling edge
1.60(1)
1.68
1.76
V
Rising edge
1.64
1.72
1.80
V
VPDRhyst
(3)
PDR hysteresis
-
40
-
mV



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