STM32F407IE datasheet(76/180 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F405xx, STM32F407xx

76/180

Doc ID 022152 Rev 3

5.3.6

Supply current characteristics

The current consumption is a function of several parameters and factors such as the

operating voltage, ambient temperature, I/O pin loading, device software configuration,

operating frequencies, I/O pin switching rate, program location in memory and executed

binary code.

The current consumption is measured as described in Figure 20: Current consumption

measurement scheme.

All Run mode current consumption measurements given in this section are performed using

a CoreMark-compliant code.

VBOR1

Brownout level 1

threshold

Falling edge

2.13

2.19

2.24

Rising edge

2.23

2.29

2.33

VBOR2

Brownout level 2

threshold

Falling edge

2.44

2.50

2.56

Rising edge

2.53

2.59

2.63

VBOR3

Brownout level 3

threshold

Falling edge

2.75

2.83

2.88

Rising edge

2.85

2.92

2.97

V12

1.2 V domain

voltage(2)(3)

VOS bit in PWR_CR

1.08

1.14

1.20

VOS bit in PWR_CR

1.20

1.26

1.32

VBORhyst

(3)

BOR hysteresis

100

TRSTTEMPO

(3)(4) Reset temporization

0.5

1.5

3.0

IRUSH

(3)

InRush current on

voltage regulator

power-on (POR or

wakeup from Standby)

160

200

ERUSH

(3)

InRush energy on

voltage regulator

power-on (POR or

wakeup from Standby)

VDD = 1.8 V, TA = 105 °C,

IRUSH = 171 mA for 31 µs

5.4

µC

The product behavior is guaranteed by design down to the minimum VPOR/PDR value.

The average expected gain in power consumption when VOS = 0 compared to VOS = 1 is around 10% for

the whole temperature range, when the system clock frequency is between 30 and 144 MHz.

Guaranteed by design, not tested in production.

The reset temporization is measured from the power-on (POR reset or wakeup from VBAT) to the instant

when first instruction is read by the user application code.

Table 18.

Embedded reset and power control block characteristics (continued)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

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