P89LPC915FDH datasheet(51/75 Pages) NXP

51 / 75 page

P89LPC915_916_917_5

Product data sheet

Rev. 05 — 15 December 2009

51 of 75

NXP Semiconductors

P89LPC915/916/917

8-bit microcontrollers with accelerated two-clock 80C51 core

8.26 Flash program memory

8.26.1 General description

The P89LPC915/916/917 ﬂash memory provides in-circuit electrical erasure and

programming. The ﬂash can be erased, read, and written as bytes. The Sector and Page

Erase functions can erase any ﬂash sector (256 bytes) or page (16 bytes). The Chip

Erase operation will erase the entire program memory. ICP using standard commercial

programmers is available. In addition, IAP and byte-erase allows code memory to be used

for non-volatile data storage. On-chip erase and write timing generation contribute to a

user-friendly programming interface. The P89LPC915/916/917 ﬂash reliably stores

memory contents even after 100,000 erase and program cycles. The cell is designed to

optimize the erase and programming mechanisms. The P89LPC915/916/917 uses VDD as

the supply voltage to perform the Program/Erase algorithms.

8.26.2 Features

• Programming and erase over the full operating voltage range.

• Byte erase allows code memory to be used for data storage.

• Read/Programming/Erase using ICP.

• Boot vector allows user-provided ﬂash loader code to reside anywhere in the ﬂash

memory space, providing ﬂexibility to the user.

• Any ﬂash program/erase operation in 2 ms.

• Programming with industry-standard commercial programmers.

• Programmable security for the code in the ﬂash for each sector.

• 100,000 typical erase/program cycles for each byte.

• 10 year minimum data retention.

8.26.3 Flash organization

The program memory consists of eight 256-byte sectors on the P89LPC915/916/917

devices. Each sector can be further divided into 16-byte pages. In addition to sector

erase, page erase, and byte erase, a 16-byte page register is included which allows from

1 to 16 bytes of a given page to be programmed at the same time, substantially reducing

overall programming time.

8.26.4 Using ﬂash as data storage

The ﬂash code memory array of this device supports individual byte erasing and

programming. Any byte in the code memory array may be read using the MOVC

instruction, provided that the sector containing the byte has not been secured (a MOVC

instruction is not allowed to read code memory contents of a secured sector). Thus any

byte in a non-secured sector may be used for non-volatile data storage.

8.26.5 Flash programming and erasing

Two different methods of erasing or programming of the ﬂash are available. The ﬂash may

be programmed or erased in the end-user application (IAP-Lite) under control of the

application’s ﬁrmware. Another option is to use the ICP mechanism. This ICP system

provides for programming through a serial clock/serial data interface. This device does not

provide for direct veriﬁcation of code memory contents. Instead, this device provides a

32-bit CRC result on either a sector or the entire user code space.

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