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7733 bảng dữ liệu(PDF) 735 Page - Renesas Technology Corp |
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7733 bảng dữ liệu(HTML) 735 Page - Renesas Technology Corp |
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735 / 940 page ![]() APPLICATIONS 7735 Group User’s Manual 17–9 (2) Timing for writing data Figure 17.1.4 shows the timing for writing data to an external memory. When data is written, the data is output from when an interval of td(WE-DQ) has passed after signal ____ ____ ____ ____ WEL/WEH’s falling edge until an interval of th(WE-DQ) has passed after signal WEL/WEH’s rising edge. td(WE-DQ) is a constant which is independent of f(XIN); th(WE-DQ) is a constant which is dependent on f(XIN). Table 17.1.4 lists the value of td(WE-DQ) and the calculation formula for th(WE-DQ). Make sure that the data output timing for writing data satisfies the following specifications of the external memory: data setup time (tsu(D)) and data hold time (th(D)) for writing data. Fig. 17.1.4 Timing at which data is written to external memory Table 17.1.4 Value of td(WE-DQ) and calculation formula for th(WE-DQ) (Unit: ns) Wait 0 0 0 Wait 1 0 1 45 – 22 1 ! 109 2•f(f2) No wait 1 0 or 1 Wait bit: Bit 2 at address 5E16 Wait selection bit: Bit 0 at address 5F16 Note: The above is applied when the system clock selection bit (bit 3 at address 6C16) = “0.” Software wait Wait bit Wait selection bit td(WE-DQ) th(WE-DQ) External memory write signals W, WE External memory chip select signals CE, S (The others are specifications of external memory.) : Specifications of the 7735 Group g This is applied when the external data bus = 16 bits wide (BYTE = “L” ). WEL, WEH Address and data output g A0/D0 to A7/D7 A8 /D8 to A15/D15 tsu(D) th(D) Address Data Address tw(WE) th(WE-DQ) td(WE-DQ) 17.1 Memory expansion |
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