7733 datasheet(421/940 Pages) RENESAS

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APPLICATIONS

7733 Group User’s Manual

17–14

When using an external memory which outputs data for more than an interval of tpzx(E-DZ) after

signal E’s rising edge

When there is a possibility that the tail of data collides with the head of an address because the

external memory outputs the data for more than an interval of tpzx(E-DZ) after signal E’s rising edge, try

to carry out the following:

q By using bus buffers and others, delete the tail of data which is output from the memory.

q Use a memory which is made by MITSUBISHI ELECTRIC CORPORATION and can be connected

without bus buffers.

Figures 17.1.9 to 17.1.12 show bus buffer usage examples and the corresponding timing diagrams.

Table 17.1.5 lists memories which can be connected without bus buffers (made by MITSUBISHI ELEC-

TRIC CORPORATION). The reason why these memories do not need buffers is that timing parameters

tDF or tdis(OE) is guaranteed. (Make sure that the read signal rises within 10 ns after signal E’s rising

edge.)

Table 17.1.5 Memories which can be connected without bus buffers (made by MITSUBISHI ELECTRIC

CORPORATION)

17.1 Memory expansion

Memory

M5M27C256AK-85, -10, -12, -15

M5M27C512AK-10, -12, -15

M5M27C100K-12, -15

M5M27C101K-12, -15

M5M27C102K-12, -15

M5M27C201K, JK-10, -12, -15

M5M27C202K, JK-10, -12, -15

M5M27C256AP, FP, VP, RV-12, -15

M5M27C512AP, FP-15

M5M27C100P-15

M5M27C101P, FP, J, VP, RV-15

M5M27C102P, FP, J, VP, RV-15

M5M27C201P, FP, J, VP, RV-12, -15

M5M27C202P, FP, J, VP, RV-12, -15

M5M28F101P, FP, J, VP, RV-10, -12, -15

M5M28F102FP, J, VP, RV-10, -12, -15

M5M5256CP, FP, KP, VP, RV-55LL, -55XL,

-70LL, -70XL, -85LL, -85XL, -10LL, -10XL

M5M5278CP, FP, J-20, -20L

M5M5278CP, FP, J-25, -25L

M5M5278DP, J-12

M5M5278DP, FP, J-15, -15L

M5M5278DP, FP, J-20, -20L

Type

Usage condition

tDF/tdis(OE) (Max.)

15 ns

(When guaranteed as kit)

(Note)

8 ns

10 ns

6 ns

7 ns

8 ns

2 • f(f2)

≤ 20 MHz

2 • f(f2)

≤ 25 MHz

EPROM

One time

PROM

Frash

memory

SRAM

Note: Specifications of the above memories are available if a comment of “tDF/tdis(OE) = 15 ns, microcomputer

and kit” is added.

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