SH7052 datasheet(790/919 Pages) RENESAS

790 / 919 page

764

After the elapse of the erase time, erase mode is exited. In exiting erase mode, the E1 bit in

FLMCR1 is cleared, then after an interval of t

CE or longer the ESU1 bit is cleared, and after a

further interval of t

CESU or longer the watchdog timer is halted.

Note:

With flash memory erasing, preprogramming (setting all memory data in the memory to

be erased to all “0”) is not necessary before starting the erase procedure.

21.7.4

Erase-Verify Mode

In erase-verify mode, data is read after memory has been erased to check whether it has been

correctly erased.

A transition to erase-verify mode is made by setting the E1 bit in FLMCR1 and waiting for an

interval of t

SEV. Before reading in erase-verify mode, perform a dummy write of H'FF data to the

read addresses, and then wait for an interval of t

SEVR or longer. When the flash memory is read in

this state (verify data is read in longword units), the data at the latched address is read. If the read

data has been erased (all “1”), a dummy write is performed to the next address, and erase-verify is

performed. The erase-verify operation is carried out on all the erase blocks; the erase block

voltage. Ensure that the operation is not repeated more than 100 times. When verification is

completed, exit erase-verify mode. Erase-verify mode is exited by clearing the EV1 bit in

FLMCR1, then waiting for an interval of t

CEV or longer. If erasure has been completed on all the

erase blocks, clear the SWE1 bit in FLMCR1. If there are any unerased blocks, make a 1-bit

setting for the flash memory area to be erased, and repeat the erase/erase-verify sequence as

before.

SH7052 bảng dữ liệu(PDF) 790 Page - Renesas Technology Corp