HEF4013B

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© NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet

Rev. 9 — 10 December 2015

4 of 16

NXP Semiconductors

HEF4013B

Dual D-type flip-flop

8.

Limiting values

[1]

For SO14 packages: above Tamb = 70 C, Ptot derates linearly with 8 mW/K.

[2]

For TSSOP14 packages: above Tamb = 60 C, Ptot derates linearly with 5.5 mW/K.

9.

Recommended operating conditions

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to VSS = 0 V (ground).

Symbol

Parameter

Conditions

Min

Max

Unit

VDD

supply voltage

0.5

+18

V

IIK

input clamping current

VI < 0.5 V or VI >VDD + 0.5 V

-

10

mA

VI

input voltage

0.5

VDD + 0.5

V

IOK

output clamping current

VO < 0.5 V or VO >VDD + 0.5 V

-

10

mA

II/O

input/output current

-

10

mA

IDD

supply current

-

50

mA

Tstg

storage temperature

65

+150

C

Tamb

ambient temperature

40

+125

C

Ptot

total power dissipation

Tamb = 40 C to +125 C

SO14

[1]

-500

mW

TSSOP14

[2]

-500

mW

P

power dissipation

per output

-

100

mW

Table 5.

Recommended operating conditions

Symbol

Parameter

Conditions

Min

Max

Unit

VDD

supply voltage

3

15

V

VI

input voltage

0

VDD

V

Tamb

ambient temperature

40

+125

C

t/V

input transition rise and fall rate

VDD = 5 V

-

3.75

s/V

VDD = 10 V

-

0.5

s/V

VDD = 15 V

-

0.08

s/V