6 Detailed Description

6.1 Overview

The 2N7002L is an N-channel enhancement-mode MOSFET designed for general purpose switching in low-

voltage , low-current applications. In a typical low-side configuration, the source is tied to ground and the gate is

driven by a logic-level signal. When the gate voltage exceeds the threshold voltage, the MOSFET turns on and

provides a low on-resistance path between drain and source.

6.2 Functional Block Diagram

Drain

Gate

Source

6.3 Feature Description

The 2N7002L is a voltage-controlled N-channel MOSFET in which drain-to-source conduction is controlled by

the applied gate-to-source voltage. When the gate-to-source voltage exceeds the gate threshold voltage, a

conduction channel is formed between the drain and source terminals. The channel resistance decreases as the

gate-to-source voltage increases.

When the gate-to-source voltage is below the threshold voltage, the drain-to-source path presents a high

impedance and limits current flow to leakage levels. The gate draws very little steady-state current, allowing the

device to be controlled directly by logic-level signals. The relatively small gate charge and parasitic capacitances

support switching operation.

When the device is turned on, how much current flows and which direction it flows depend on the voltages at

the drain and source pins and on the other components connected in the circuit, such as pull-up or pull-down

elements. When the device is turned off, an internal diode may still allow current to flow in one direction,

depending on the voltage across the device, and this behavior should be considered when designing the circuit.

6.4 Device Functional Modes

Table 6-1 lists the functional modes of the device.

Table 6-1. Function Table

MODE

DESCRIPTION

OFF

VGS < threshold; device does not

conduct

ON

VGS > threshold; device conducts

2N7002L

SLVSJE8A – DECEMBER 2025 – REVISED FEBRUARY 2026

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