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TAS5613APHD bảng dữ liệu(PDF) 4 Page - Texas Instruments |
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TAS5613APHD bảng dữ liệu(HTML) 4 Page - Texas Instruments |
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4 / 33 page ![]() TAS5613A SLAS711B – JUNE 2010 – REVISED SEPTEMBER 2011 www.ti.com ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range unless otherwise noted (1) TAS5613A UNIT VDD to GND –0.3 to 13.2 V GVDD to GND –0.3 to 13.2 V PVDD_X to GND_X(2) –0.3 to 53 V OUT_X to GND_X(2) –0.3 to 53 V BST_X to GND_X(2) –0.3 to 66.2 V BST_X to GVDD_X(2) –0.3 to 53 V VREG to GND –0.3 to 4.2 V GND_X to GND –0.3 to 0.3 V GND to AGND –0.3 to 0.3 V OC_ADJ, M1, M2, M3, OSC_IO+, OSC_IO –, FREQ_ADJ, VI_CM, C_STARTUP, –0.3 to 4.2 V PSU_REF to GND INPUT_X –0.3 to 7 V RESET, SD, OTW, OTW1, OTW2, CLIP, READY to GND –0.3 to 7 V Continuous sink current (SD, OTW, OTW1, OTW2, CLIP, READY) 9 mA Operating junction temperature range, TJ 0 to 150 °C Storage temperature, Tstg –40 to 150 °C Human-Body Model(3) (all pins) ±2 kV Electrostatic discharge Charged-Device Model(3) (all pins) ±500 V (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) These voltages represents the DC voltage + peak AC waveform measured at the terminal of the device in all conditions. (3) Failure to follow good anti-static ESD handling during manufacture and rework will contribute to device malfunction. Make sure the operators handling the device are adequately grounded through the use of ground straps or alternative ESD protection. 4 Copyright © 2010–2011, Texas Instruments Incorporated |
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