7.6 Electrical Characteristics

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 10-1)

PARAMETER

TEST CONDITIONS(1)

MIN

TYP(2)

MAX

UNIT

II

Input leakage current FORCEOFF, FORCEON, EN

±0.01

±1

μA

ICC

Supply current

(TA = 25°C)

Auto-powerdown disabled

No load,

FORCEOFF and FORCEON at VCC

0.3

1

mA

Powered off

No load, FORCEOFF at GND

1

10

μA

Auto-powerdown enabled

No load, FORCEOFF at VCC,

FORCEON at GND,

All RIN are open or grounded

1

10

(1)

Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V.

(2)

All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.

7.7 Driver Section: Electrical Characteristics

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 10-1)

PARAMETER

TEST CONDITIONS(1)

MIN

TYP(2) MAX

UNIT

VOH

High-level output voltage

DOUT at RL = 3 kΩ to GND,

DIN = GND

5

5.4

V

VOL

Low-level output voltage

DOUT at RL = 3 kΩ to GND,

DIN = VCC

–5

–5.4

V

IIH

High-level input current

VI = VCC

±0.01

±1

μA

IIL

Low-level input current

VI at GND

±0.01

±1

μA

IOS

Short-circuit output

current(3)

VCC = 3.6 V,

VO = 0 V

±35

±60

mA

VCC = 5.5 V,

VO = 0 V

±35

±90

ro

Output resistance

VCC, V+, and V– = 0 V,

VO = ±2 V

300

10M

Ω

Ioff

Output leakage current

FORCEOFF = GND

VO = ±12 V,

VCC = 3 V to 3.6 V

±25

μA

VO = ±10 V,

VCC = 4.5 V to 5.5 V

±25

(1)

Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V.

(2)

All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.

(3)

Short-circuit durations should be controlled to prevent exceeding the device absolute power-dissipation ratings, and not more than one

output should be shorted at a time.

7.8 Switching Characteristics: Driver

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 10-1)

PARAMETER

TEST CONDITIONS(1)

MIN

TYP(2)

MAX UNIT

Maximum data rate

(see Figure 8-1)

RL = 3 kΩ

CL = 1000 pF

250

kbit/s

CL = 250 pF,

VCC = 3 V to 4.5 V

1000

CL = 1000 pF,

VCC = 4.5 V to 5.5 V

1000

tsk(p)

Pulse skew(3)

CL = 150 pF to 2500 pF, RL = 3 kΩ to 7 kΩ,

See Figure 8-2

100

ns

SR(tr)

Slew rate,

transition region

(see Figure 8-1)

VCC = 3.3 V,

RL = 3 kΩ to 7 kΩ,

CL = 150 pF to 1000 pF

18

150

V/μs

(1)

Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V.

(2)

All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.

(3)

Pulse skew is defined as |tPLH - tPHL| of each channel of the same device.

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SLLS694C – NOVEMBER 2005 – REVISED JULY 2021

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