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STM32C011F6U6 bảng dữ liệu(PDF) 60 Page - STMicroelectronics

tên linh kiện STM32C011F6U6
Giải thích chi tiết về linh kiện  Arm® Cortex®-M0 32-bit MCU, 32 KB Flash, 6 KB RAM,2 x USART, timers, ADC, comm. I/Fs, 2-3.6 V
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Electrical characteristics
STM32C011x4/x6
60/94
DS13866 Rev 3
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.
5.3.11
Electrical sensitivity characteristics
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the ANSI/JEDEC standard.
Table 45. EMI characteristics
Symbol Parameter
Conditions
Monitored
frequency band
Max vs.
[fHSE/fCPU]
Max vs.
[fHSI/fCPU]
Unit
48 MHz /
48 MHz
48 MHz /
48 MHz
SEMI
Peak level
VDD = 3.6 V, TA = 25 °C,
LQFP48 package
compliant with IEC
61967-2
0.1 MHz to 30 MHz
3
3
dBµV
30 MHz to 130 MHz
5
-2
130 MHz to 1 GHz
1
-1
1 GHz to 2 GHz
7
8
EMI level
2
2
-
Table 46. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Package
Class
Maximum
value(1)
Unit
VESD(HBM)
Electrostatic
discharge voltage
(human body model)
TA = +25 °C, conforming to
ANSI/ESDA/JEDEC JS-001
All
1C
-2000/+1500
V
VESD(CDM)
Electrostatic
discharge voltage
(charge device model)
TA = +25 °C, conforming to
ANSI/ESDA/JEDEC JS-002
All
C2a
500
1. Evaluated by characterization – Not tested in production.



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