SH32F2601PSLASH032PR datasheet(34/370 Pages) SINOWEALTH

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SH32F2601

For the Flash main block, can only be programmed once, Each 16-bit or 32-bit data can be programmed when the value

of the address is 0x00. Otherwise the operation is aborted and the programming error flag PGERR@FLASH_SR bit is set.

If the sector of the main flash program block has been protected by the write protection bit, when the sector is operated,

the operation is aborted and the write protection error flag WRPRTERR @FLASH_SR bit is set.

8.3.3.6

EEPROM-like Memory Block Erasure Programming

EEPROM-like memory block erasure programming is similar to main program block sector erasure and programming. The

difference lies in flash unlock registers. The operation instruction words written to FLASH_CR register are different, and the

flag bits of the lock memory block are different.

8.3.3.7

OTP Block Programming

OTP block can only be programmed once, and it cannot be erased after programming. The programming of the OTP block

is similar to the programming of the main program block. The difference lies in flash unlock registers. The operation

instruction words written to FLASH_CR register are different, and the flag bits of the lock memory block are different.

8.3.3.8

Main Memory Block Protection

The main Flash memory can be protected against different types of unwanted access(read/write/erase). There are two

types of protection:

(1) Read Protection

Read protection is effective immediately after writing.

Read protection has three levels of protection: no read protection, low-level read protection, and high-level read protection.

No read protection: When the read protection byte is set to 0xA55A, read protection is not performed, and the read, write,

and erase operations on flash are not limited.

Low-level limit protection: When the read protection byte is set to a value other than 0xA55A and 0xC33C, the low-level

read protection becomes effective, and the read protection byte read at this time is 0xAAAA. In low-level read protection status,

the operation of indirectly accessing the flash main memory in debug mode is also prohibited.

When low-level read protection is active, the user code is only allowed to read the flash main program memory in

non-debug mode. In read protection status, the code executed in the flash main memory can program the flash to achieve

functions such as IAP or data storage. Under low-level protection, code can be loaded into the built-in RAM in debug mode

(SWD) and code instructions can be excuted to remove low-level read protection (full-chip erase), or Sinowealth tool (SWD)

can also be used to perfrom mass erase to relieve low-level read protection.

High-level read protection: High-level read protection is active when the read protection byte is set to 0xC33C. Under

high-level read protection, the debug function (SWD) is turned off.

(2) Write Protection

The write protection bit is used to protect against unwanted write operations.. Setting WRP[31:0] bits of the write protection

bytes can enable the protection for corresponding sector. SH32F2601 provides protection in units of 4 sectors.

If an erase/program operation to a write-protected part of the Flash memory is attempted (sector protected by write

protection bit), the write protection error flag (WRPRTERR) is set in the FLASH_SR register.

The following table shows the mapping of write protection bits to corresponding protected sectors.

Table8-5

Write Protection Mapping Table

WP bit

Protected Sector

WP[0]

Sector0 ~ Sector3

WP[1]

Sector4 ~ Sector7

WP[2]

Sector8 ~ Sector11

WP[14]

Sector56 ~ Sector59

WP[15]

Sector60 ~ Sector63

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