STM32WB10CC datasheet(67/110 Pages) STMICROELECTRONICS

67 / 110 page

DS13259 Rev 2

67/110

STM32WB10CC

Electrical characteristics

102

Table 36. Current consumption in Standby mode

Symbol

Parameter

Conditions

Typ

Max(1)

Unit

-VDD 0 °C 25 °C 40 °C 55 °C 85 °C 0 °C 25 °C 85 °C

IDD

(Standby)

Supply current

in Standby

mode (backup

registers and

SRAMs

retained),



RTC disabled

BLE disabled



independent

watchdog

2.4 V

250

345

540

935

3000

3.0 V

255

355

565

985

3150

334

907

6959

3.6 V

280

390

625

1050 3400

373

989

7270

BLE disabled



with

independent

watchdog

2.4 V

465

565

765

1150 3200

3.0 V

520

625

840

1250 3400 1309 1169

7188

3.6 V

595

715

950

1400 3750 1716 1259

7630

IDD

(Standby

with RTC)

Supply current

in Standby

mode (backup

registers and

SRAMs

retained),



RTC enabled



BLE disabled

RTC clocked

by LSI, no

independent

watchdog

2.4 V

600

700

900

1300 3350

3.0 V

700

800

1000 1450 3600

898

1419

8182

3.6 V

815

935

1150 1600 3950

995

1569

604

RTC clocked

by LSI, with

independent

watchdog

2.4 V

650

750

950

1350 3400

3.0 V

765

865

1100 1500 3650 1085 1487

7358

3.6 V

905

1000 1250 1700 4050 1190 1641

8042

RTC clocked

by LSE



quartz (2) in

low drive

mode

2.4 V

645

755

955

1350 3400

3.0 V

760

875

1100 1500 3700

588

1094

7332

3.6 V

920

1050 1300 1750 4100

738

1171

7757

IDD

(SRAM)(3)

Supply current

to be

subtracted in

Standby mode

when SRAM

is not retained

2.4 V

85.0

100

145

240

850

3.0 V

95.0

110

165

285

1000

3.6 V

115

150

220

370

1250

IDD

(wakeup

from

Standby)

Supply current

during

wakeup from

Standby mode

Wakeup clock

is HSI16.



See (4)

3.0 V

-0.5

1. Evaluated by characterization (mean ± 4 σ), not tested in production, unless otherwise specified.

2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF

loading capacitors.

3. The supply current in Standby with SRAMs mode is IDD(Standby) + IDD(SRAMs). The supply current in Standby with RTC

with SRAM mode is IDD(Standby + RTC) + IDD(SRAM).

4. Wakeup with code execution from Flash memory. Average value given for a typical wakeup time as specified in Table 41.

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