AT45DB021E datasheet(43/74 Pages) DIALOG

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AT45DB021E

DS-AT45DB021E—8789J—03/2021

Operation Mode Summary

The commands described previously can be grouped into four different categories to better describe which

commands can be executed at what times.

Group A commands consist of:

Main Memory Page Read

Continuous Array Read (SPI)

Read Sector Protection Register

Read Sector Lockdown Register

Read Security Register

Buffer Read

Group B commands consist of:

Page Erase

Block Erase

Sector Erase

Chip Erase

Main Memory Page to the Buffer Transfer

Main Memory Page to the Buffer Compare

Buffer to Main Memory Page Program with Built-In Erase

Buffer to Main Memory Page Program without Built-In Erase

Main Memory Page Program through the Buffer with Built-In Erase

10. Main Memory Byte/Page Program through Buffer without Built-In Erase

11. Auto Page Rewrite

12. Read-Modify-Write

Group C commands consist of:

Buffer Write

Status Register Read

Manufacturer and Device ID Read

Group D commands consist of:

Erase Sector Protection Register

Program Sector Protection Register

Sector Lockdown

Program Security Register

Buffer and Page Size Configuration

Freeze Sector Lockdown

If a Group A command is in progress (not fully completed), do not start another command in Group A, B, C, or D.

However, during the internally self-timed portion of Group B commands, any command in Group C can be

executed. The Group B commands using the Buffer use Group C commands. Finally, during the internally self-

timed portion of a Group D command, execute only the Status Register Read command.

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