STM32G041C6M3TR datasheet(85/118 Pages) STMICROELECTRONICS

85 / 118 page

DS12993 Rev 2

85/118

STM32G041x6/x8

Electrical characteristics

5.3.19

Temperature sensor characteristics

5.3.20

VBAT monitoring characteristics

2. In degraded mode, the voltage reference buffer can not maintain accurately the output voltage which will follow (VDDA -

drop voltage).

3. Guaranteed by test in production.

4. The temperature coefficient at VREF+ output is the sum of TCoeff_vrefint and TCoeff_vrefbuf.

5. The capacitive load must include a 100 nF capacitor in order to cut-off the high frequency noise.

6. To correctly control the VREFBUF inrush current during start-up phase and scaling change, the VDDA voltage should be in

the range [2.4 V to 3.6 V] and [2.8 V to 3.6 V] respectively for VRS = 0 and VRS = 1.

Table 61. TS characteristics

Symbol

Parameter

Min

Typ

Max

Unit

TL(1)

VTS linearity with temperature

±1

±2

°C

Avg_Slope(2)

Average slope

2.3

2.5

2.7

mV/°C

V30

Voltage at 30°C (±5 °C)(3)

0.742

0.76

0.785

tSTART(TS_BUF)(1) Sensor Buffer Start-up time in continuous mode(4)

-8

µs

tSTART(1)

Start-up time when entering in continuous mode(4)

120

µs

tS_temp(1)

ADC sampling time when reading the temperature

µs

IDD(TS)(1)

Temperature sensor consumption from VDD, when

selected by ADC

-4.7

µA

1. Guaranteed by design.

2. Based on characterization results, not tested in production.

3. Measured at VDDA = 3.0 V ±10 mV. The V30 ADC conversion result is stored in the TS_CAL1 byte.

Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power sleep modes.

Table 62. VBAT monitoring characteristics

Symbol

Parameter

Min

Typ

Max

Unit

Resistor bridge for VBAT

-39-

kΩ

Ratio on VBAT measurement

Er(1)

Error on Q

-10

tS_vbat(1)

ADC sampling time when reading the VBAT

µs

1. Guaranteed by design.

Table 63. VBAT charging characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

RBC

Battery

charging

resistor

VBRS = 0

kΩ

VBRS = 1

1.5

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