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STM32G041C6M3TR bảng dữ liệu(PDF) 64 Page - STMicroelectronics

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Electrical characteristics
STM32G041x6/x8
64/118
DS12993 Rev 2
Note:
For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
Figure 19. Typical application with a 32.768 kHz crystal
Note:
An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden
to add one.
5.3.8
Internal clock source characteristics
The parameters given in Table 41 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 21: General operating
conditions. The provided curves are characterization results, not tested in production.
High-speed internal (HSI16) RC oscillator
3.
tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is
reached. This value is measured for a standard crystal and it can vary significantly with the crystal manufacturer
MS30253V2
OSC32_IN
OSC32_OUT
Drive
programmable
amplifier
fLSE
32.768 kHz
resonator
Resonator with integrated
capacitors
CL1
CL2
Table 41. HSI16 oscillator characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI16
HSI16 Frequency
VDD=3.0 V, TA=30 °C
15.88
-
16.08
MHz
Temp(HSI16)
HSI16 oscillator frequency drift over
temperature
TA= 0 to 85 °C
-1
-
1
%
TA= -40 to 125 °C
-2
-
1.5
%
VDD(HSI16)
HSI16 oscillator frequency drift over
VDD
VDD=1.62 V to 3.6 V
-0.1
-
0.05
%
TRIM
HSI16 frequency user trimming step
From code 127 to 128
-8
-6
-4
%
From code 63 to 64
From code 191 to 192
-5.8
-3.8
-1.8
For all other code
increments
0.2
0.3
0.4
DHSI16(2)
Duty Cycle
-
45
-
55
%
tsu(HSI16)(2)
HSI16 oscillator start-up time
-
-
0.8
1.2
μs



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