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STM32G031F6 bảng dữ liệu(PDF) 47 Page - STMicroelectronics |
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STM32G031F6 bảng dữ liệu(HTML) 47 Page - STMicroelectronics |
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47 / 117 page ![]() DS12992 Rev 2 47/117 STM32G031x4/x6/x8 Electrical characteristics 92 5.3.2 Operating conditions at power-up / power-down The parameters given in Table 22 are derived from tests performed under the ambient temperature condition summarized in Table 21. 5.3.3 Embedded reset and power control block characteristics The parameters given in Table 23 are derived from tests performed under the ambient temperature conditions summarized in Table 21: General operating conditions. Table 22. Operating conditions at power-up / power-down Symbol Parameter Conditions Min Max Unit tVDD VDD slew rate VDD rising - ∞ µs/V VDD falling; ULPEN = 0 10 ∞ VDD falling; ULPEN = 1 100 ∞ ms/V Table 23. Embedded reset and power control block characteristics Symbol Parameter Conditions(1) Min Typ Max Unit tRSTTEMPO(2) POR temporization when VDD crosses VPOR VDD rising - 250 400 μs VPOR(2) Power-on reset threshold - 1.62 1.66 1.70 V VPDR(2) Power-down reset threshold - 1.60 1.64 1.69 V VBOR1 Brownout reset threshold 1 VDD rising 2.05 2.10 2.18 V VDD falling 1.95 2.00 2.08 VBOR2 Brownout reset threshold 2 VDD rising 2.20 2.31 2.38 V VDD falling 2.10 2.21 2.28 VBOR3 Brownout reset threshold 3 VDD rising 2.50 2.62 2.68 V VDD falling 2.40 2.52 2.58 VBOR4 Brownout reset threshold 4 VDD rising 2.80 2.91 3.00 V VDD falling 2.70 2.81 2.90 VPVD0 Programmable voltage detector threshold 0 VDD rising 2.05 2.15 2.22 V VDD falling 1.95 2.05 2.12 VPVD1 PVD threshold 1 VDD rising 2.20 2.30 2.37 V VDD falling 2.10 2.20 2.27 VPVD2 PVD threshold 2 VDD rising 2.35 2.46 2.54 V VDD falling 2.25 2.36 2.44 VPVD3 PVD threshold 3 VDD rising 2.50 2.62 2.70 V VDD falling 2.40 2.52 2.60 VPVD4 PVD threshold 4 VDD rising 2.65 2.74 2.87 V VDD falling 2.55 2.64 2.77 |
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