GD25B16CSIG datasheet(45/53 Pages) GIGADEVICE

45 / 53 page

3.3V Uniform Sector

Dual and Quad Serial Flash

GD25B16C

8.6. AC CHARACTERISTICS

(T= -40℃~85℃, VCC=2.7~3.6V, CL=30pf)

Symbol

Parameter

Min.

Typ.

Max.

Unit.

Serial Clock Frequency For: Dual I/O(BBH),

Quad I/O(EBH), Quad Output(6BH) (Dual I/O & Quad I/O

Without High Performance Mode), on 3.0V-3.6V power supply

104

MHz

fC1

Serial Clock Frequency For: Dual I/O(BBH),

Quad I/O(EBH), Quad Output(6BH) (Dual I/O & Quad I/O

Without High Performance Mode), on 2.7V-3.0V power supply

MHz

fC2

Serial Clock Frequency For: Dual I/O(BBH),

Quad I/O(EBH), Quad Output(6BH) (Dual I/O & Quad I/O

With High Performance Mode), on 2.7V-3.6V power supply

120

MHz

Serial Clock Frequency For: Read(03H)

MHz

tCLH

Serial Clock High Time

tCLL

Serial Clock Low Time

tCLCH

Serial Clock Rise Time (Slew Rate)

0.1

V/ns

tCHCL

Serial Clock Fall Time (Slew Rate)

0.1

V/ns

tSLCH

CS# Active Setup Time

tCHSH

CS# Active Hold Time

tSHCH

CS# Not Active Setup Time

tCHSL

CS# Not Active Hold Time

tSHSL

CS# High Time（read/write）

tSHQZ

Output Disable Time

tCLQX

Output Hold Time

1.2

tDVCH

Data In Setup Time

tCHDX

Data In Hold Time

tCLQV

Clock Low To Output Valid

tDP

CS# High To Deep Power-Down Mode

μs

tRES1

CS# High To Standby Mode Without Electronic Signature

Read

μs

tRES2

CS# High To Standby Mode With Electronic Signature Read

μs

tSUS

CS# High To Next Command After Suspend

μs

tRS

Latency Between Resume And Next Suspend

100

μs

tRST

CS# High To Next Command After Reset (Except From

Erase)

μs

tRST_E

CS# High To Next Command After Reset (From erase)

Write Status Register Cycle Time

tBP1

Byte Program Time( First Byte)

μs

tBP2

Additional Byte Program Time ( After First Byte)

2.5

μs

tPP

Page Programming Time

0.6

2.4

tSE

Sector Erase Time(4K Bytes)

300

tBE1

Block Erase Time(32K Bytes)

0.15

1.2

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