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Giải thích chi tiết về linh kiện  3.3V Uniform Sector Dual and Quad Serial Flash
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GD25B16CSIG bảng dữ liệu(HTML) 42 Page - GigaDevice Semiconductor (Beijing) Inc.

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3.3V Uniform Sector
Dual and Quad Serial Flash
GD25B16C
42
8. ELECTRICAL CHARACTERISTICS
8.1. POWER-ON TIMING
Vcc(max)
Vcc(min)
VWI
tVSL
Chip Selection is not allowed
Device is fully
accessible
Time
Table6. Power-Up Timing and Write Inhibit Threshold
Symbol
Parameter
Min
Max
Unit
tVSL
VCC(min) To CS# Low
1.8
ms
VWI
Write Inhibit Voltage
1.5
2.5
V
8.2. INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH).The Status Register
contains 00H (all Status Register bits are 0), except QE bit (S9) is set to 1..
8.3. ABSOLUTE MAXIMUM RATINGS
Parameter
Value
Unit
Ambient Operating Temperature
-40 to 85
℃
Storage Temperature
-65 to 150
℃
Applied Input / Output Voltage
-0.6 to VCC+0.4
V
Transient Input / Output Voltage
-2.0 to VCC+2.0
V
VCC
-0.6 to 4.2
V
Figure 37. Input Test Waveform and Measurement Level
Vss
20ns
Maximum Negative Overshoot Waveform
Maximum Positive Overshoot Waveform
20ns
20ns
Vss-2.0V
Vcc
20ns
20ns
20ns
Vcc + 2.0V



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