MMPF0100Z datasheet(13/128 Pages) NXP

13 / 128 page

NXP Semiconductors

PF0100Z

GENERAL PRODUCT CHARACTERISTICS

Figure 4. Current overtemperature waveforms

Standby

MMPF0100AZ

VSNVS from either VIN or LICELL

SW1A/B combined in PFM

SW1C in PFM

SW2 in PFM

SW3A/B combined in PFM

SW4 in PFM

SWBST off

Trimmed 16 MHz RC enabled

Trimmed reference active

VGEN1-6 enabled

VREFDDR enabled

TA = -40 °C to 85 °C

TA = -40 °C to 105 °C

No load on VSNVS. Processor enabled in

low power mode. All rails powered on

except boost (load = 0 mA)

297

450

550

μA

(18)

Notes

16.

Refer to Figure 4 for coin cell mode characteristics over temperature.

17.

When VIN is below the UVDET threshold, in the range of 1.8 V ≤ VIN < 2.65 V, the quiescent current increases by 50 μA, typically.

18.

For PFM operation, headroom should be 300 mV or greater.

19.

From 0 °C to 85 °C

20.

From -40 °C to 85 °C

21.

Additional current may be drawn in the coin cell mode when RESETBMCU is pulled up to VSNVS due an internal path from RESETBMCU to VIN.

The additional current is <30

μA with a pull up resistor of 100 kΩ. The i.MX 6x processors have an internal pull up from the POR_B pin to the

VDD_SNVS_IN pin. For i.MX 6x applications, if additional current in the coin cell mode is not desired, use an external switch to disconnect the

RESETBMCU path when VIN is removed. For non-i.MX 6 applications, pull-up RESETBMCU to a rail that is off in the coin cell mode.

Table 8. Current consumption summary (continued)

PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = 3.6 V, VDDIO = 1.7 V to 3.6 V, LICELL = 1.8 V to 3.3 V,

VSNVS = 3.0 V, typical external component values, unless otherwise noted. Typical values are characterized at VIN = 3.6 V,

VDDIO = 3.3 V, LICELL = 3.0 V, VSNVS = 3.0 V and 25 °C, unless otherwise noted.

Coin cell mode

100

-40

-20

20406080

Temperature (oC)

MMPF0100

MMPF0100A

Temperature (°C)

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