MMPF0100Z datasheet(71/128 Pages) NXP

71 / 128 page

NXP Semiconductors

PF0100Z

FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

Switch mode supply SW4 (continued)

ISW4

Rated output load current

2.8 V < VIN < 4.5 V, 0.625 V < VSW4 < 3.3 V

–

1000

(57)

ISW4LIM

Current limiter peak current detection

Current through inductor

SW4ILIM = 0

SW4ILIM = 1

1.4

1.0

2.0

1.5

3.0

2.4

VSW4OSH

Start-up overshoot

ISW4 = 0.0 mA

DVS clk = 25 mV/4

μs, VIN = VINSW4 = 4.5 V

––

tONSW4

Turn-on time

Enable to 90% of end value

ISW4 = 0.0 mA

DVS clk = 25 mV/4

μs, VIN = VINSW4 = 4.5 V

–

500

µs

fSW4

Switching frequency

SW4FREQ[1:0] = 00

SW4FREQ[1:0] = 01

SW4FREQ[1:0] = 10

–

1.0

2.0

4.0

–

MHz

ηSW4

Efficiency

•fSW4 = 2.0 MHz, LSW4 = 1.0 μH

PFM, 1.8 V, 1.0 mA

PFM, 1.8 V, 50 mA

APS, PWM 1.8 V, 200 mA

APS, PWM 1.8 V, 500 mA

APS, PWM 1.8 V, 1000 mA

PWM 0.75 V, 200 mA

PWM 0.75 V, 500 mA

PWM 0.75 V, 1000 mA

–

ΔVSW4

Output ripple

–

VSW4LIR

Line regulation (APS, PWM)

–

VSW4LOR

DC load regulation (APS, PWM)

–

VSW4LOTR

Transient load regulation

• Transient load = 0.0 mA to 500 mA, di/dt = 100 mA/

μs

Overshoot

Undershoot

–

ISW4Q

Quiescent current

PFM mode

APS mode

–

145

–

µA

RONSW4P

SW4 P-MOSFET RDS(on)

at VIN = VINSW4 = 3.3 V

–

236

274

RONSW4N

SW4 N-MOSFET RDS(on)

at VIN = VINSW4 = 3.3 V

–

293

378

ISW4PQ

SW4 P-MOSFET leakage current

VIN = VINSW4 = 4.5 V

––

6.0

µA

ISW4NQ

SW4 N-MOSFET leakage current

VIN = VINSW4 = 4.5 V

––

2.0

µA

Table 86. SW4 electrical characteristics (continued)

All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = VINSW4 = 3.6 V, VSW4 = 1.8 V,

ISW4 = 100 mA, SW4_PWRSTG[2:0] = [101], typical external component values, fSW4 = 2.0 MHz, single/dual phase and independent

mode, unless otherwise noted. Typical values are characterized at VIN = VINSW4 = 3.6 V, VSW4 = 1.8 V, ISW4 = 100 mA,

SW4_PWRSTG[2:0] = [101], and 25 °C, unless otherwise noted.

Symbol

Parameter

Min.

Typ.

Max.

Unit

Notes

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