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STM32L100RC bảng dữ liệu(PDF) 73 Page - STMicroelectronics

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STM32L100RC bảng dữ liệu(HTML) 73 Page - STMicroelectronics

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STM32L100RC
96
6.3.13
I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 47 are derived from tests
performed under the conditions summarized in Table 12. All I/Os are CMOS and TTL
compliant.
Table 41. I/O static characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIL
Input low level voltage
TC and FT I/O
-
-
0.3 VDD(1)(2)
V
BOOT0
-
-
0.14 VDD(2)
VIH
Input high level voltage
TC I/O
0.45 VDD+0.38(2)
--
FT I/O
0.39 VDD+0.59(2)
--
BOOT0
0.15 VDD+0.56(2)
--
Vhys
I/O Schmitt trigger voltage
hysteresis(2)
TC and FT I/O
-
10% VDD(3)
-
BOOT0
-
0.01
-
Ilkg
Input leakage current (4)
VSS VIN VDD
I/Os with LCD
--
±50
nA
VSS VIN VDD
I/Os with analog
switches
--
±50
VSS VIN VDD
I/Os with analog
switches and LCD
--
±50
VSS VIN VDD
I/Os with USB
--
±250
VSS VIN VDD
TC and FT I/Os
--
±50
FT I/O
VDD VIN 5V
--
±10
µA
RPU
Weak pull-up equivalent
resistor(5)(1)
VIN = VSS
30
45
60
k
Ω
RPD
Weak pull-down equivalent
resistor(5)
VIN = VDD
30
45
60
k
Ω
CIO
I/O pin capacitance
-
-
5
-
pF
1. Guaranteed by test in production
2. Guaranteed by design, not tested in production.
3. With a minimum of 200 mV.
4. The max. value may be exceeded if negative current is injected on adjacent pins.
5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
MOS/NMOS contribution to the series resistance is minimum (~10% order).



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