STM32L100RC datasheet(69/104 Pages) STMICROELECTRONICS

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STM32L100RC

Flash memory and data EEPROM

Table 34. Flash memory and data EEPROM characteristics

Symbol

Parameter

Conditions

Min

Typ

Max(1)

1. Guaranteed by design, not tested in production.

Unit

VDD

Operating voltage

Read / Write / Erase

-1.65

3.6

tprog

Programming/ erasing

time for byte / word /

double word / half-page

Erasing

3.28

3.94

Programming

3.28

3.94

IDD

Average current during

the whole programming /

erase operation

TA = 25 °C, VDD = 3.6 V

600

µA

Maximum current (peak)

during the whole

programming / erase

operation

-1.5

2.5

Table 35. Flash memory and data EEPROM endurance and retention

Symbol

Parameter

Conditions

Value

Unit

Min(1)

1. Guaranteed by characterization results, not tested in production.

Typ Max

NCYC(2)

Cycling (erase / write)

Program memory

TA = -40°C to

105 °C

kcycles

Cycling (erase / write)

EEPROM data memory

300

tRET(2)

2. Characterization is done according to JEDEC JESD22-A117.

Data retention (program memory) after

10 kcycles at TA = 85 °C

TRET = +85 °C

years

Data retention (EEPROM data memory)

after 300 kcycles at TA = 85 °C

Data retention (program memory) after

10 kcycles at TA = 105 °C

TRET = +105 °C

Data retention (EEPROM data memory)

after 300 kcycles at TA = 105 °C

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