STM32F410RB datasheet(115/142 Pages) STMICROELECTRONICS

115 / 142 page

DocID028094 Rev 5

115/142

STM32F410x8/B

Electrical characteristics

118

6.3.22

VBAT monitoring characteristics

6.3.23

Embedded reference voltage

The parameters given in Table 75 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 15.

Table 74. VBAT monitoring characteristics

Symbol

Parameter

Min

Typ

Max

Unit

Resistor bridge for VBAT

-50-

Ratio on VBAT measurement

Er(1)

Error on Q

–1

TS_vbat(2)

ADC sampling time when reading the VBAT

1 mV accuracy

µs

1. Guaranteed by design.

2. Shortest sampling time can be determined in the application by multiple iterations.

Table 75. Embedded internal reference voltage

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VREFINT

Internal reference voltage

- 40 °C < TA < + 125 °C 1.18

1.21

1.24

TS_vrefint(1)

ADC sampling time when reading the

internal reference voltage

-10

µs

VRERINT_s(2)

Internal reference voltage spread over

the temperature range

VDD = 3 V ± 10m V

TCoeff(2)

Temperature coefficient

ppm/°C

tSTART(2)

Startup time

µs

1. Shortest sampling time can be determined in the application by multiple iterations.

2. Guaranteed by design

Table 76. Internal reference voltage calibration values

Symbol

Parameter

Memory address

VREFIN_CAL

Raw data acquired at temperature of

30 °C VDDA = 3.3 V

0x1FFF 7A2A - 0x1FFF 7A2B

STM32F410RB bảng dữ liệu(PDF) 115 Page - STMicroelectronics

STM32F410RB bảng dữ liệu(HTML) 115 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

bảng dữ liệu tải về

Link URL