STM32F410RB datasheet(92/142 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F410x8/B

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DocID028094 Rev 5

Functional susceptibility to I/O current injection

While a simple application is executed on the device, the device is stressed by injecting

current into the I/O pins programmed in floating input mode. While current is injected into

the I/O pin, one at a time, the device is checked for functional failures.

The failure is indicated by an out of range parameter: ADC error above a certain limit (>5

LSB TUE), out of conventional limits of induced leakage current on adjacent pins

(out of –5 µA/+0 µA range), or other functional failure (for example reset, oscillator

frequency deviation).

Negative induced leakage current is caused by negative injection and positive induced

leakage current by positive injection.

The test results are given in Table 54.

Note:

It is recommended to add a Schottky diode (pin to ground) to analog pins which may

potentially inject negative currents.

6.3.16

I/O port characteristics

General input/output characteristics

Unless otherwise specified, the parameters given in Table 55 are derived from tests

performed under the conditions summarized in Table 15. All I/Os are CMOS and TTL

compliant.

Table 54. I/O current injection susceptibility(1)

1. NA = not applicable

Symbol

Description

Functional susceptibility

Unit

Negative

injection

Positive

injection

IINJ

Injected current on BOOT0 pin

- 0

Injected current on NRST pin

- 0

Injected current on PB3, PB4, PB5, PB6,

PB7, PB8, PB9, PC13, PC14, PC15, PH1,

PDR_ON, PC0, PC1, PC2, PC3

- 0

Injected current on any other FT pin

- 5

Injected current on any other pins

- 5

+ 5

Table 55. I/O static characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VIL

FT, TC and NRST I/O input low

level voltage

1.7 V≤VDD≤3.6 V

0.3VDD(1)

BOOT0 I/O input low level

voltage

1.75 V≤VDD ≤3.6 V,

- 40 °C≤TA ≤ 125 °C

0.1VDD+0.1(2)

1.7 V≤VDD ≤3.6 V,

0 °C≤TA ≤ 125 °C

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