STM32F410RB datasheet(91/142 Pages) STMICROELECTRONICS

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STM32F410x8/B

Electrical characteristics

118

6.3.14

Absolute maximum ratings (electrical sensitivity)

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test

conforms to the JESD22-A114/C101 standard.

Static latchup

Two complementary static tests are required on six parts to assess the latchup

performance:

•

A supply overvoltage is applied to each power supply pin

•

A current injection is applied to each input, output and configurable I/O pin

These tests are compliant with EIA/JESD 78A IC latchup standard.

6.3.15

I/O current injection characteristics

As a general rule, current injection to the I/O pins, due to external voltage below VSS or

above VDD (for standard, 3 V-capable I/O pins) should be avoided during normal product

operation. However, in order to give an indication of the robustness of the microcontroller in

cases when abnormal injection accidentally happens, susceptibility tests are performed on a

sample basis during device characterization.

Table 52. ESD absolute maximum ratings(1)

Symbol

Ratings

Conditions

Class

Maximum

value(2)

Unit

VESD(HBM)

Electrostatic discharge

voltage (human body

model)

TA = +25 °C conforming to

ANSI/JEDEC JS-001

2000

VESD(CDM)

Electrostatic discharge

voltage (charge device

model)

TA = +25 °C conforming to

ANSI/ESD STM5.3.1

UFQFPN48

500

WLCSP36

250

LQFP48

500

LQPF64

500

UFBGA64

TBD

1. TBD stands for “to be defined”.

2. Guaranteed by characterization.

Table 53. Electrical sensitivities

Symbol

Parameter

Conditions

Class

Static latch-up class

TA = +125 °C conforming to JESD78A

II level A

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