STM32F410RB datasheet(78/142 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F410x8/B

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DocID028094 Rev 5

6.3.8

External clock source characteristics

High-speed external user clock generated from an external source

In bypass mode the HSE oscillator is switched off and the input pin is a standard I/O. The

external clock signal has to respect the Table 55. However, the recommended clock input

waveform is shown in Figure 19.

The characteristics given in Table 38 result from tests performed using an high-speed

external clock source, and under ambient temperature and supply voltage conditions

summarized in Table 15.

Table 37. Low-power mode wakeup timings(1)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

tWUSLEEP(2)

Wakeup from Sleep mode

CPU

clock

cycles

tWUSLEEPFDSM(2)

Flash memory in Deep power

down mode

40,0

µs

tWUSTOP(2)

Wakeup from Stop mode,

code execution from Flash

memory

Main regulator

12.9

15.0

Main regulator, Flash memory

in Deep power down mode

104.9

115.0

Regulator in low-power mode(3)

20.8

25.0

Regulator in low-power mode,

Flash memory in Deep power

down mode

112.9

120.0

Wakeup from Stop mode,

code execution from RAM

Main regulator, Flash memory

in Stop or Deep power down

mode

-4.9

7.0

Regulator in low-power mode,

Flash memory in Stop or Deep

power down mode(3)

12.8

20.0

tWUSTDBY(2)(4)

Wakeup from Standby

mode

316.8

350.0

tWUFLASH

Wakeup of Flash memory

From Flash_Stop mode

10.0

Wakeup of Flash memory

From Flash Deep power down

mode

40.0

1. Guaranteed by characterization.

2. The wakeup times are measured from the wakeup event to the point in which the application code reads the first instruction.

3. The specification is valid for wakeup from regulator in low power mode or in low power low voltage mode, since the timing

difference is negligible.

4. tWUSTDBY maximum value is given at - 40 °C.

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