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ST72321R7-Auto bảng dữ liệu(PDF) 199 Page - STMicroelectronics

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ST72321R7-Auto bảng dữ liệu(HTML) 199 Page - STMicroelectronics

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ST72321xx-Auto
Electrical characteristics
Doc ID 13829 Rev 1
199/243
19.6
Memory characteristics
19.6.1
RAM and hardware registers
19.6.2
Flash memory
Warning:
Do not connect 12V to VPP before VDD is powered on, as this
may damage the device.
Table 120.
RAM supply voltage
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRM
Data retention mode(1)
1.
Minimum VDD supply voltage without losing data stored in RAM (in Halt mode or under RESET) or in
hardware registers (only in Halt mode). Not tested in production.
Halt mode (or RESET)
1.6
V
Table 121.
Dual voltage HDFlash memory
Symbol
Parameter
Conditions
Min(1)
1.
Data based on characterization results, not tested in production
Typ
Max(1)
Unit
fCPU
Operating frequency
Read mode
0
8
MHz
Write / Erase mode
1
8
VPP
Programming voltage(2)
2.
VPP must be applied only during the programming or erasing operation and not permanently for reliability
reasons.
4.5V < VDD < 5.5V
11.4
12.6
V
IDD
Supply current(3)
3.
Data based on simulation results, not tested in production
Run mode (fCPU = 4 MHz)
3
mA
Write / Erase
0
Power down mode / HALT
1
10
µA
IPP
VPP current
(3)
Read (VPP = 12V)
200
Write / Erase
30
mA
tVPP
Internal VPP stabilization
time
10
µs
tRET
Data retention
TA =55°C
20
years
NRW
Write erase cycles
TA = 85°C
100
cycles
TPROG
TERASE
Programming or erasing
temperature range
-40
25
85
°C



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