L9659 datasheet(15/51 Pages) STMICROELECTRONICS

15 / 51 page

L9659

Electrical specifications

Doc ID 022048 Rev 2

15/51

tR_WAIT

Rmeas wait time

Wait time before AOUT

voltage is stable for ADC

reading R AOUT= 5.1k

;

CAOUT=10nF

300

µs

FENx input pins

tFENfilter

Minimum pulse width

µs

IFENPD

Internal pull-down current

VIN = VIL to VDD

µA

VFENLO

Input low voltage threshold

0.8

VFENHI

Input high voltage threshold

2.0

TFENLATCH

FEN Latch timer

512

tFLACC

FEN latch timer

accuracy

- 20%

Deployment drivers

TRESOLUTION Diagnostic timing / resolution IHS  IMEAS,

 T

MEASURE_TIME  3.7ms

CSQUIB _HI = 0.12µF

CSQUIB _LO = 0.12µF

22.5

27.5

µs

TACCURACY

Diagnostic time

acurracy

LSB

IMEAS

High side driver current limit

detect threshold

Guaranteed by design

IHSX x

0.90

IHSX x

0.99

RDSonTOTAL

Total high and low side MOS

on resistance

High side MOS +

low side MOS D9:D8=”11”;

VRES = 7V; I = 1.6A @95°C

2.0



RDSonHS

High side MOS on resistance D9:D8=”11”; VRES = 7V;

Tamb = 95°C; IVRES =

1.6A;

-0.3

0.8



RDSonLS

Low side MOS on resistance

0.6

1.2



IHS_12A

High side deployment current

limit

Configuration mode 1 bits

D9:D8=”00” SQHx shorted

to ground;

VRES = 7 to 37V

1.21

1.47

IHS_15A

Configuration Mode 1 bits

D9:D8=”01” SQHx shorted

to ground;

VRES = 7 to 25V

1.51

1.85

IHS_175A

Configuration Mode 1 bits

D9:D8=”11” SQHx shorted

to ground;

VRES = 7 to 37V

1.76

2.14

tILIM

Low side MOS shutdown

under short to battery

Vsqblo=18V

110

µs

ILS

Low side MOS current limit

2.2

4.0

Table 7.

Squib deployment drivers and diagnostics - DC electrical characteristics (continued)

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

L9659 bảng dữ liệu(PDF) 15 Page - STMicroelectronics

L9659 bảng dữ liệu(HTML) 15 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51

bảng dữ liệu tải về

Link URL