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STM8AL3188TCX bảng dữ liệu(PDF) 86 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  Automotive 8-bit ultra-low-power MCU, 64 Kbyte Flash, RTC, LCD, data EEPROM, timers, USARTs, I2C, SPIs, ADC, DAC, COMPs
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STM8AL3188TCX bảng dữ liệu(HTML) 86 Page - STMicroelectronics

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Electrical parameters
STM8AL318x STM8AL3L8x
86/131
DocID027179 Rev 6
Figure 22. LSE oscillator circuit diagram
Internal clock sources
Subject to general operating conditions for VDD, and TA.
High speed internal RC oscillator (HSI)
In the following table, data are based on characterization results, not tested in production,
unless otherwise specified.
Table 33. LSE oscillator characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
fLSE
Low speed external oscillator
frequency
-
-
32.768
-
kHz
RF
Feedback resistor
ΔV = 200 mV
-
1.2
-
M
Ω
C(1)(2)
Recommended load capacitance
-
-
8
-
pF
IDD(LSE) LSE oscillator power consumption
VDD = 1.8 V
-
450
-
nA
VDD = 3 V
-
600
-
VDD = 3.6 V
-
750
-
gm
Oscillator transconductance
-
3(3)
--
µA/V
tSU(LSE)(4) Startup time
VDD is stabilized
-
1
-
s
1. C=CL1=CL2 is approximately equivalent to 2 x crystal CLOAD.
2. The oscillator selection can be optimized in terms of supply current using a high quality resonator with a small Rm value.
Refer to crystal manufacturer for more details.
3. Guaranteed by design.
4.
tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation.
This value is measured for a standard crystal resonator and it varies significantly with the crystal manufacturer.



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