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PC87310 bảng dữ liệu(PDF) 42 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
tên linh kiện PC87310
Giải thích chi tiết về linh kiện  PC87310 (SuperI/OTM) Dual UART with Floppy Disk Controller and Parallel Port
PDF  52 Pages
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nhà sản xuất  NSC [National Semiconductor (TI)]
Trang chủ  http://www.national.com
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PC87310 bảng dữ liệu(HTML) 42 Page - National Semiconductor (TI)

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60 DC Electrical Characteristics
VDD e 5V g10% VSS e 0V unless otherwise specified (Note 3) (Continued)
Symbol
Parameter
Conditions
Min
Max
Units
MICROPROCESSOR AND PARALLEL PORT PINS
VOL
Output Low Voltage
IOL e 24 mA on D0–D7
IOL e 16 mA on PD0–PD7
04
V
IOL e 12 mA on All Other Outputs
VOH
Output High Voltage
IOH eb6mAonD0–D7
IOH eb6mAonPD0–PD7
IOH eb1 mA On INIT AFD STB and SLIN
24
V
(Note 5)
IOH eb02 mA on All Other Outputs
IIL
Input Leakage
VDD e 55V VSS e 0V
g
10
m
A
All Other Pins Floating
IOZ
Output TRI-STATE Leakage
VDD e 55V VSS e 0V
g
20
m
A
VOUT e 0V 55V
61 PHASE LOCKED LOOP CHARACTERISTICS
VCC e 5V g10% FXTAL e 24 MHz unless otherwise specified
Symbol
Parameter
Conditions
Typ
Units
VREF
SETCUR Pin Reference
R1 e 56 kX VCC e 5V
11
V
Voltage
KVCO
VCO Gain (Note 1)
tDATA e 1 ms g10%
25
MradsV
R1
Recommended Pump
3–12
kX
Resistor Range
KP(UP)
Charge Pump Up Current
R1 e 56 kX
250
(none)
Gain (IREF IP(UP)) (Note 2)
KP(DWN)
Charge Pump Down Current
R1 e 56 kX
225
(none)
Gain (IREF IP(DWN)) (Note 2)
KPLL
Internal Phase Locked Loop
(R1 e 56 kX)
Gain (Note 3)
Pump Up
75
Mrad
Pump Down
70
Mrad
TSW
Static Window
Early
Late
(Note 4)
(R1 e 56 kX)
250 kbs
1075
872
ns
500 kbs
530
440
ns
10 Mbs
259
234
ns
TDW
Dynamic Window
(Note)
70
%
Margin
Note
Measurements made with a repeating ‘‘DB6’’ data pattern with reverse write precompensation using recommended filter values for the configuration shown
in
Figure 3c 25 C 50V 0% MSV
Note 1
The VCO gain is measured at the 10 Mbs data rate by forcing the data period over a range from 900 ns to 1100 ns and measuring the resulting voltage
on the filter pin The best straight line gain is fit to the measured points
Note 2
This is the current gain of the charge pump which is defined as the output current divided by the current through R1
Note 3
This is the product of VREF c KP c KVCO The total variation in this specification indicates the total loop gain variation contributed by the internal circuitry
The KVCO portion of this specification is measured at the 10 Mbs data rate by forcing the data period over a range of 900 ns to 1100 ns and measuring the
resultant KVCO KP is measured by forcing the Filter pin to 21V and measuring the ratio of the charge pump current over the input current
Note 4
The FDC is guaranteed to correctly decode a single shifted clock pulse at the end of a long series of non-shifted preamble bits as long as the single shifted
pulse is shifted less than the amount specified in TSW The length of the preamble is long enough for the PLL to lock The filter components used are those in
Table 4-8
Note 5
INIT AFD STB and SLIN are open collector output pins that require pull-up resistors (47 kX)toVDD
62 CAPACITANCE
TA e 25 C VDD e VSS e 0V
Symbol
Parameter
Conditions
Min
Typ
Max
Units
CIN
Input Capacitance
fc e 1 MHz
5
7
pF
COUT
Output Capacitance
Unmeasured Pins
68
pF
CIO
InputOutput Capacitance
Returned to VSS
10
12
pF
42



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