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PC87310 bảng dữ liệu(PDF) 42 Page - National Semiconductor (TI) |
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PC87310 bảng dữ liệu(HTML) 42 Page - National Semiconductor (TI) |
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42 / 52 page ![]() 60 DC Electrical Characteristics VDD e 5V g10% VSS e 0V unless otherwise specified (Note 3) (Continued) Symbol Parameter Conditions Min Max Units MICROPROCESSOR AND PARALLEL PORT PINS VOL Output Low Voltage IOL e 24 mA on D0–D7 IOL e 16 mA on PD0–PD7 04 V IOL e 12 mA on All Other Outputs VOH Output High Voltage IOH eb6mAonD0–D7 IOH eb6mAonPD0–PD7 IOH eb1 mA On INIT AFD STB and SLIN 24 V (Note 5) IOH eb02 mA on All Other Outputs IIL Input Leakage VDD e 55V VSS e 0V g 10 m A All Other Pins Floating IOZ Output TRI-STATE Leakage VDD e 55V VSS e 0V g 20 m A VOUT e 0V 55V 61 PHASE LOCKED LOOP CHARACTERISTICS VCC e 5V g10% FXTAL e 24 MHz unless otherwise specified Symbol Parameter Conditions Typ Units VREF SETCUR Pin Reference R1 e 56 kX VCC e 5V 11 V Voltage KVCO VCO Gain (Note 1) tDATA e 1 ms g10% 25 MradsV R1 Recommended Pump 3–12 kX Resistor Range KP(UP) Charge Pump Up Current R1 e 56 kX 250 (none) Gain (IREF IP(UP)) (Note 2) KP(DWN) Charge Pump Down Current R1 e 56 kX 225 (none) Gain (IREF IP(DWN)) (Note 2) KPLL Internal Phase Locked Loop (R1 e 56 kX) Gain (Note 3) Pump Up 75 Mrad Pump Down 70 Mrad TSW Static Window Early Late (Note 4) (R1 e 56 kX) 250 kbs 1075 872 ns 500 kbs 530 440 ns 10 Mbs 259 234 ns TDW Dynamic Window (Note) 70 % Margin Note Measurements made with a repeating ‘‘DB6’’ data pattern with reverse write precompensation using recommended filter values for the configuration shown in Figure 3c 25 C 50V 0% MSV Note 1 The VCO gain is measured at the 10 Mbs data rate by forcing the data period over a range from 900 ns to 1100 ns and measuring the resulting voltage on the filter pin The best straight line gain is fit to the measured points Note 2 This is the current gain of the charge pump which is defined as the output current divided by the current through R1 Note 3 This is the product of VREF c KP c KVCO The total variation in this specification indicates the total loop gain variation contributed by the internal circuitry The KVCO portion of this specification is measured at the 10 Mbs data rate by forcing the data period over a range of 900 ns to 1100 ns and measuring the resultant KVCO KP is measured by forcing the Filter pin to 21V and measuring the ratio of the charge pump current over the input current Note 4 The FDC is guaranteed to correctly decode a single shifted clock pulse at the end of a long series of non-shifted preamble bits as long as the single shifted pulse is shifted less than the amount specified in TSW The length of the preamble is long enough for the PLL to lock The filter components used are those in Table 4-8 Note 5 INIT AFD STB and SLIN are open collector output pins that require pull-up resistors (47 kX)toVDD 62 CAPACITANCE TA e 25 C VDD e VSS e 0V Symbol Parameter Conditions Min Typ Max Units CIN Input Capacitance fc e 1 MHz 5 7 pF COUT Output Capacitance Unmeasured Pins 68 pF CIO InputOutput Capacitance Returned to VSS 10 12 pF 42 |
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