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AS4C32M16D2 bảng dữ liệu(PDF) 49 Page - Alliance Semiconductor Corporation

tên linh kiện AS4C32M16D2
Giải thích chi tiết về linh kiện  512M (32M x 16 bit) DDRII Synchronous DRAM
PDF  70 Pages
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nhà sản xuất  ALSC [Alliance Semiconductor Corporation]
Trang chủ  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4C32M16D2 bảng dữ liệu(HTML) 49 Page - Alliance Semiconductor Corporation

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AS4C32M16D2
Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
49
Rev. 1.1
Feb. /2013
Figure 23. Read burst interrupt timing: (CL=3, AL=0, RL=3, BL=8)
CK#
CK
CMD
Read A
NOP
Read B
NOP
NOP
NOP
NOP
NOP
NOP
NOP
A0
A1
A2
A3
B0
B1
B2
B3
B4
B5
B6
B7
DQS
DQS#
DQs
NOTE 1: Read burst interrupt function is only allowed on burst of 8. Burst interrupt of 4 is prohibited.
NOTE 2: Read burst of 8 can only be interrupted by another Read command. Read burst interruption by Write
command or Precharge command is prohibited.
NOTE 3: Read burst interrupt must occur exactly two clocks after previous Read command. Any other Read burst
interrupt timings are prohibited.
NOTE 4: Read burst interruption is allowed to any bank inside DRAM.
NOTE 5: Read burst with Auto Precharge enabled is not allowed to interrupt.
NOTE 6: Read burst interruption is allowed by another Read with Auto Precharge command.
NOTE 7: All command timings are referenced to burst length set in the mode register. They are not referenced to
actual burst. For example, Minimum Read to Precharge timing is AL+BL/2 where BL is the burst length set in the
mode register and not the actual burst (which is shorter because of interrupt).
Figure 24. Data input (write) timing
DQS#
DQ
DQS
tDQSH
tWPRE
DQS
DM
tDQSL
tWPSL
VIL(ac)
VIH(ac)
D
D
VIL(dc)
VIH(dc)
D
D
DMin
DMin
DQS#
DMin
VIH(ac)
VIL(ac)
DMin
VIH(dc)
VIL(dc)
tDS
tDS
tDH
tDH



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