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DP83950B bảng dữ liệu(PDF) 78 Page - National Semiconductor (TI) |
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DP83950B bảng dữ liệu(HTML) 78 Page - National Semiconductor (TI) |
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78 / 80 page ![]() 90 AC and DC Specifications (Continued) REGISTER WRITE TIMING TLF11096 – 34 Number Symbol Parameter Min Max Units T90 wradrs Write Address Setup 0 ns T91 wradrh Write Address Hold 0 ns T92 wrabufa Write Active to BUFEN Active 95 355 ns T93 wribufi Write Inactive to BUFEN Inactive 35 ns T94 wradatv Write Active to Data Valid 275 ns T95 wrdath Write Data Hold 0 ns T96 wrardya Write Active to RDY Active 340 585 ns T97 wrirdyi Write Inactive to RDY Inactive 30 ns T98 wrw Write Width 600 ns T99 wradt Write Active to 350 ns Data TRI-STATE Note Assuming zero propagation delay on external buffer Note Minimum high time between readwrite cycles is 100 ns Note The data will always TRI-STATE before BUFEN goes active with a load of 100 pF on the data bus Note When RDY is used the minimum 600 ns write width does not have to be maintained 100 AC Timing Test Conditions All specifications are valid only if the mandatory isolation is employed and all differential signals are taken to be at the AUI side of the pulse transformer Input Pulse Levels (TTLCMOS) GND to 30V Input Rise and Fall Times (TTLCMOS) 5 ns Input and Output Reference Levels (TTLCMOS) 15V Input Pulse Levels (Diff) 20 VP-P Input and Output 50% Point of Reference Levels (Diff) the Differential TRI-STATE Reference Levels Float (DV) g05V Output Load (See Figure Below) TLF11096 – 36 Note 1 100 pF includes scope and jig capacitance Note 2 S1 e Open for timing tests for push pull outputs S1 e VCC for VOL test S1 e GND for VOH test S1 e VCC for High Impedance to active low and active low to High Impedance measurements S1 e GND for High Impedance to active high and active high to High Impedance measurements 78 |
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