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DP83950B bảng dữ liệu(PDF) 78 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
tên linh kiện DP83950B
Giải thích chi tiết về linh kiện  RIC??Repeater Interface Controller
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DP83950B bảng dữ liệu(HTML) 78 Page - National Semiconductor (TI)

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90 AC and DC Specifications (Continued)
REGISTER WRITE TIMING
TLF11096 – 34
Number
Symbol
Parameter
Min
Max
Units
T90
wradrs
Write Address Setup
0
ns
T91
wradrh
Write Address Hold
0
ns
T92
wrabufa
Write Active to BUFEN Active
95
355
ns
T93
wribufi
Write Inactive to BUFEN Inactive
35
ns
T94
wradatv
Write Active to Data Valid
275
ns
T95
wrdath
Write Data Hold
0
ns
T96
wrardya
Write Active to RDY Active
340
585
ns
T97
wrirdyi
Write Inactive to RDY Inactive
30
ns
T98
wrw
Write Width
600
ns
T99
wradt
Write Active to
350
ns
Data TRI-STATE
Note
Assuming zero propagation delay on external buffer
Note
Minimum high time between readwrite cycles is 100 ns
Note
The data will always TRI-STATE before BUFEN goes active with a load of 100 pF on the data bus
Note
When RDY is used the minimum 600 ns write width does not have to be maintained
100 AC Timing Test Conditions
All specifications are valid only if the mandatory isolation is
employed and all differential signals are taken to be at the
AUI side of the pulse transformer
Input Pulse Levels (TTLCMOS)
GND to 30V
Input Rise and Fall Times (TTLCMOS)
5 ns
Input and Output Reference
Levels (TTLCMOS)
15V
Input Pulse Levels (Diff)
20 VP-P
Input and Output
50% Point of
Reference Levels (Diff)
the Differential
TRI-STATE Reference Levels
Float (DV) g05V
Output Load (See
Figure Below)
TLF11096 – 36
Note 1
100 pF includes scope and jig capacitance
Note 2
S1 e Open for timing tests for push pull outputs
S1 e VCC for VOL test
S1 e GND for VOH test
S1 e VCC for High Impedance to active low and
active low to High Impedance
measurements
S1 e GND for High Impedance to active high and
active high to High Impedance
measurements
78



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